IRFHS8342TRPBF

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IRFHS8342TRPBF

MOSFET N-CH 30V 8.8A/19A TSDSON

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Thông số kỹ thuật

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 2.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-PQFN (2x2) (DFN2020)
Package / Case 6-PowerVDFN
Base Product Number IRFHS8342

Tổng quan

Description

IRFHS8342TRPBF is a specific part number that likely refers to an electronic component, specifically a type of MOSFET (metal-oxide-semiconductor field-effect transistor) or another semiconductor device. These components are commonly used in various applications such as power management, signal amplification, or voltage regulation in electronic circuits.
The designation typically includes information about the characteristics and specifications of the device, such as its voltage and current ratings, package type, and possibly its intended application. Understanding the data sheet for this component is essential for engineers and designers to ensure compatibility and performance in their projects.
For precise details, including pin configuration, maximum ratings, and application notes, it’s best to consult the manufacturer's documentation or data sheet related to IRFHS8342TRPBF.

Features

The IRFHS8342TRPBF is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, making it suitable for various low voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 35A, enabling efficient power management.
3. Low R_DS(on): With a low on-resistance (R_DS(on)), typically around 10 mΩ, it ensures minimal power loss during operation, enhancing thermal performance.
4. Fast Switching: Optimized for high-speed switching applications, it reduces transition losses, which is beneficial for power converters and motor drivers.
5. Package: Available in a TO-220 package, it offers good thermal dissipation, which is critical for reliable performance in demanding environments.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2V, ensuring compatibility with various control signals.
These features make the IRFHS8342TRPBF suitable for applications in power supplies, automotive, and industrial control systems.

Package

The IRFHS8342TRPBF is packaged in a SO-8 surface mount package.

Pinout

The IRFHS8342TRPBF is a dual N-channel MOSFET housed in a 8-pin SOIC package. It features a total of 8 pins, each serving specific functions:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Drain connection for the first N-channel MOSFET.
3. Source 1 (S1) - Source connection for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Drain connection for the second N-channel MOSFET.
6. Source 2 (S2) - Source connection for the second N-channel MOSFET.
7. Common Source (CS) - Typically connected to ground or common reference.
8. Common Drain (CD) - Provides a common connection point for the drains of both MOSFETs.
This device is designed for high efficiency and is commonly used in power management applications. Its low on-resistance and fast switching capabilities make it suitable for various electronic circuits.

Manufacturer

The manufacturer of the IRFHS8342TRPBF is Infineon Technologies. Infineon is a global semiconductor manufacturer that specializes in various sectors, including automotive, industrial power control, and chip card & security solutions. The company is known for producing a wide range of semiconductor products, including power transistors, sensors, and microcontrollers. Infineon plays a significant role in enabling applications in energy efficiency, mobility, and security. It is headquartered in Neubiberg, Germany, and operates globally, providing innovative solutions for various industries.

Application

The IRFHS8342TRPBF is a high-speed MOSFET primarily used in power management applications, including DC-DC converters, synchronous rectification, and power supplies. Its fast switching capabilities make it suitable for applications in automotive, industrial, and consumer electronics, particularly in devices requiring efficient power handling and thermal performance. Additionally, it can be utilized in battery management systems and renewable energy systems.

Equivalent

The IRFHS8342TRPBF is a N-channel MOSFET. Equivalent products include:
1. BSS84 - Low voltage N-channel MOSFET.
2. AO3400 - Similar N-channel MOSFET with comparable specifications.
3. IRLB8743 - N-channel MOSFET with low Rds(on).
Always check specific datasheets for voltage, current ratings, and package compatibility before substituting.

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