IRFD110PBF

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IRFD110PBF

MOSFET N-CH 100V 1A 4DIP

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Part Status Obsolete
Base Product Number IRFD110
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package 4-DIP (0.300", 7.62mm)
Packaging Tube

Tổng quan

Description

IRFD110PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficient switching capabilities. It is commonly used in power management applications, including DC-DC converters, motor control, and load switching. This device supports high voltage and current ratings, making it suitable for various electronic circuits.
Key features include low on-resistance (R_DS(on)), which minimizes power loss and heat generation, and a fast switching speed, enhancing overall efficiency. The IRFD110PBF is housed in a TO-220 package, allowing for easy thermal management through heat sinks. Its robustness makes it ideal for both consumer and industrial applications, where reliable performance is critical.
Overall, the IRFD110PBF is an essential component in modern electronic design, delivering both performance and reliability in power applications.

Features

The IRFD110PBF is an N-channel MOSFET designed for various applications, including power management and switching. Its key features include:
1. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 7.5A, enabling effective current management in circuits.
3. Low R_DS(on): The MOSFET features a low on-resistance (R_DS(on)) of approximately 0.04Ω, which minimizes power losses during operation.
4. Fast Switching: Its design allows for rapid switching speeds, enhancing performance in high-frequency applications.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically around 2-4V, allowing for easy drive with standard logic levels.
6. Package Type: It is available in a TO-220 package, facilitating efficient thermal management and heat dissipation.
7. RoHS Compliant: The IRFD110PBF is compliant with RoHS standards, ensuring it meets environmental regulations.
These features make the IRFD110PBF suitable for use in various electronic circuits, including power supplies and motor control systems.

Package

The IRFD110PBF is packaged in a TO-220 form factor. This package type provides good thermal performance and is suitable for discrete power applications.

Pinout

The IRFD110PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on and off.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It allows current to flow out of the MOSFET.
The IRFD110PBF is designed for applications such as power switching and amplifying signals, featuring low on-resistance and fast switching capabilities.

Manufacturer

The manufacturer of the IRFD110PBF is Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in developing and manufacturing a wide range of semiconductor products and solutions, including power semiconductors, microcontrollers, sensors, and integrated circuits. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on innovation in energy efficiency, mobility, and security. Infineon is known for its commitment to sustainability and cutting-edge technology, making it a key player in the semiconductor market.

Application

The IRFD110PBF is a N-channel MOSFET primarily used in low-voltage applications due to its low on-resistance and high-speed switching capabilities. Common application areas include power management in DC-DC converters, motor control, load switching, and driving small inductive loads. It is also suitable for use in automotive and industrial systems where efficient power handling is essential.

Equivalent

The IRFD110PBF is an N-channel MOSFET suitable for various applications. Equivalent products include the BSS138, 2N7000, and IRF3708. Ensure to check specifications like voltage, current, and RDS(on) for compatibility in your specific application.

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