IRFBG20PBF

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IRFBG20PBF

MOSFET N-CH 1000V 1.4A TO220AB

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 1.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 11Ohm @ 840mA, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 500 pF @ 25 V
PowerDissipation(Max) 54W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRFBG20PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies, designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 20A. This device is characterized by its low on-resistance (R_DS(on)), which minimizes power losses during operation, making it ideal for power management in various applications, including motor drives, power supplies, and DC-DC converters.
The IRFBG20PBF is packaged in a TO-220 format, which allows for efficient heat dissipation. It also includes a built-in gate protection feature to safeguard against voltage spikes, enhancing reliability. The "PBF" suffix indicates that the device is lead-free, compliant with RoHS standards.
Overall, the IRFBG20PBF is suitable for applications requiring high efficiency and reliability in power conversion and control.

Features

The IRFBG20PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (Vds) of 200V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 20A, making it ideal for various power switching applications.
3. Low On-Resistance: With a typical Rds(on) of around 0.08 ohms at a gate-source voltage (Vgs) of 10V, it ensures minimal power loss and efficient operation.
4. Fast Switching Speed: Optimized for rapid switching, reducing the time spent in transition states and enhancing overall efficiency.
5. Thermal Performance: Features a TO-220 package for effective heat dissipation, allowing for improved thermal management.
6. Gate Charge (Qg): Low gate charge aids in reducing driving power requirements and improving switching performance.
7. RoHS Compliant: Meets environmental regulations for hazardous substances, ensuring safer usage in various applications.
These characteristics make the IRFBG20PBF suitable for applications in power supplies, motor drives, and other high-efficiency switching scenarios.

Package

The IRFBG20PBF is packaged in a TO-220 case. This package type features a tab for heat sinking and is commonly used for high-power applications, providing effective thermal management and ease of mounting.

Pinout

The IRFBG20PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) primarily used for switching and amplification in power applications. It features a 5-lead TO-220 package.
Pin Count and Functions:
1. Gate (G) - Pin 1: Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D) - Pin 2: The terminal through which the load current flows when the device is on.
3. Source (S) - Pin 3: The terminal that connects to the ground or negative side of the circuit.
The MOSFET has a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 40A. It is popular in applications like power supplies, motor controls, and inverters due to its efficiency and thermal performance.

Manufacturer

The IRFBG20PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on developing innovative solutions for energy efficiency, mobility, and security. Infineon is headquartered in Neubiberg, Germany, and is recognized for its commitment to sustainability and advanced technology in the semiconductor sector.

Application

The IRFBG20PBF is an N-channel MOSFET primarily used in various applications such as motor control, power management, and switching power supplies. Its characteristics make it suitable for automotive applications, renewable energy systems like solar inverters, and industrial automation. It is also utilized in high-efficiency circuits and as a switch in power electronics for energy conversion and regulation tasks.

Equivalent

Equivalent products to the IRFBG20PBF MOSFET include the STP20NF20, FQD20N20, and BTA20-600V. These alternatives may have similar voltage, current ratings, and characteristics. However, always verify specifications such as RDS(on), VGS(th), and package type to ensure compatibility for your specific application.

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