IRFB7537PBF

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IRFB7537PBF

MOSFET N-CH 60V 173A TO220AB

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series HEXFET®, StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 173A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 3.3mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.7V @ 150µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7020 pF @ 25 V
PowerDissipation(Max) 230W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRFB7537PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. Manufactured by Infineon, it features a low on-resistance (RDS(on)), which minimizes conduction losses, making it ideal for applications such as DC-DC converters, motor drives, and power management systems.
Key specifications include a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) capability of up to 100A at a 25°C ambient temperature. The device also offers fast switching speeds and a low gate charge (Qg), enhancing efficiency in high-frequency operations.
The IRFB7537PBF is packaged in a TO-220 style, allowing for effective heat dissipation and easy mounting. Its robustness and reliability make it suitable for a range of electronic devices, including industrial equipment and renewable energy systems. Additionally, it is RoHS-compliant, ensuring it meets environmental regulations. Overall, the IRFB7537PBF is an excellent choice for engineers seeking efficient power management solutions.

Features

The IRFB7537PBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power management tasks.
2. Current Rating: The continuous drain current (I_D) is rated at 120A, allowing it to handle significant loads.
3. Low On-Resistance: With a maximum R_DS(on) of 9.5 mΩ at V_GS = 10V, it provides low conduction losses, enhancing efficiency.
4. Fast Switching: Its gate charge (Q_g) is relatively low, promoting fast switching capabilities that reduce transition losses in high-frequency applications.
5. Thermal Performance: It features a maximum junction temperature (T_J) of 175°C, allowing it to operate in high-temperature environments.
6. Package: Available in D2PAK and TO-220 packages which facilitate efficient heat dissipation.
Overall, the IRFB7537PBF is ideal for automotive, industrial, and power supply applications, where performance and reliability are crucial.

Package

The IRFB7537PBF is packaged in a TO-220 package type. This package provides efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRFB7537PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. A voltage applied here allows current to flow between the drain and source.

2. Drain (D): The current flows out of this pin when the MOSFET is turned on. It connects to the load in the circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The IRFB7537PBF is designed for high-efficiency power applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power management, motor control, and similar applications.

Manufacturer

The manufacturer of the IRFB7537PBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing and manufacturing a wide range of semiconductor and system solutions, focusing on automotive, industrial power control, and security technologies. Infineon plays a significant role in enabling energy-efficient and reliable electronic systems and is known for its innovations in power semiconductors, including MOSFETs and IGBTs, which are used in various applications such as renewable energy, automotive, and consumer electronics.

Application

The IRFB7537PBF is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, power supplies, and inverters. It is suitable for high-efficiency switching applications, such as in renewable energy systems and electric vehicles, due to its low on-resistance and fast switching capabilities. Additionally, it can be employed in industrial automation and consumer electronics where efficient power control is essential.

Equivalent

The IRFB7537PBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. FDP75N06 - ON Semiconductor
3. PSMN2R8-80B - Nexperia
4. BSC014N08NS3 - Infineon
Always check specific datasheets for exact specifications and suitability for your application.

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