IRFB5615PBF

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IRFB5615PBF

MOSFET N-CH 150V 35A TO220AB

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 39mOhm @ 21A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1750 pF @ 50 V
PowerDissipation(Max) 144W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRFB5615PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is part of the International Rectifier's lineup of power MOSFETs, featuring a low on-resistance (RDS(on)) of approximately 0.018 ohms, which minimizes power loss during operation. This MOSFET can handle a continuous drain current of up to 100A with a maximum gate-to-source voltage of ±20V.
Key features include a high breakdown voltage of 75V, fast switching speeds, and a robust thermal performance, making it suitable for various applications such as power supply circuits, motor drives, and inverter designs. Its TO-220 package allows for easy heat dissipation, enhancing reliability and performance in demanding environments. The IRFB5615PBF is also RoHS compliant, ensuring it meets environmental regulations. Overall, this MOSFET is favored for its efficiency, reliability, and versatility in power management solutions.

Features

The IRFB5615PBF is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, making it suitable for medium-voltage applications.
2. Current Rating: It supports a continuous drain current (ID) of up to 60A, allowing it to handle substantial power loads.
3. RDS(on): It features a low on-state resistance (RDS(on)) of approximately 5.6 mΩ, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1.8V to 2.6V, facilitating operation with low gate drive voltages.
5. Switching Speed: The device supports fast switching, making it ideal for high-frequency applications.
6. Package Type: Housed in a TO-220 or similar package, it offers efficient thermal management.
7. Applications: Commonly used in power supplies, motor drives, and other power conversion systems.
Overall, the IRFB5615PBF is engineered for high efficiency and reliability in power electronics.

Package

The IRFB5615PBF is typically packaged in a TO-220 or D2PAK (TO-263) format. These packages are designed for efficient heat dissipation and are commonly used in power MOSFET applications.

Pinout

The IRFB5615PBF is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied here turns the MOSFET on, allowing current to flow.

2. Drain (D): The drain pin is the point through which the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the entry point for the current into the MOSFET. It is typically connected to the ground in low-side switching applications.
4. Tab: The tab is connected to the drain and serves as a heat dissipation point.
The IRFB5615PBF is designed for high-efficiency applications, featuring low on-resistance and high-speed switching capabilities, making it suitable for power management and motor control.

Manufacturer

The IRFB5615PBF is manufactured by Infineon Technologies, a global semiconductor company known for producing a wide range of electronic components. Infineon specializes in power semiconductors, microcontrollers, and sensors, serving various industries including automotive, industrial, and consumer electronics. The company is recognized for its innovation in power management and energy efficiency solutions, making it a key player in the semiconductor market.

Application

The IRFB5615PBF is an N-channel MOSFET used in various applications, including power management, motor control, and DC-DC converters. It is suitable for high-efficiency switching applications in renewable energy systems, electric vehicles, and industrial automation. Its low R_DS(on) and high voltage rating make it ideal for use in power supplies and inverter circuits, enhancing energy efficiency in both consumer and industrial electronics.

Equivalent

The IRFB5615PBF is a N-channel MOSFET. Equivalent products include the STP55NF06, RFP30N06, FQP30N06L, and AUIRF5615. Ensure to verify the specifications like voltage rating, current rating, and Rds(on) for compatibility with your application.

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