IRFB3006PBF

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IRFB3006PBF

MOSFET N-CH 60V 195A TO220AB

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Thông số kỹ thuật

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 170A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8970 pF @ 50 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRFB3006

Tổng quan

Description

IRFB3006PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It is part of the IRFB series produced by Infineon Technologies. This component features a low on-resistance (RDS(on)), which minimizes energy losses and improves thermal performance, making it suitable for power management in various electronic devices.
Key specifications include a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) rating of 100A at a specified case temperature. The package type is TO-220, facilitating easy mounting and heat dissipation. The IRFB3006PBF is often used in applications such as DC-DC converters, motor drives, and inverters, where efficient power handling is crucial.
The "PBF" designation indicates that the product is lead-free, aligning with environmental standards. Overall, the IRFB3006PBF is recognized for its reliability and high performance in demanding electronic environments.

Features

The IRFB3006PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 110A, which is beneficial for high-load circuits.
3. Low RDS(on): Features a low on-resistance (RDS(on) at 10mΩ) for improved efficiency and reduced power losses during operation.
4. Fast Switching: Designed for fast switching capabilities, which enhances performance in high-frequency applications.
5. Thermal Performance: Offers excellent thermal stability with a maximum junction temperature (TJ) of 175°C, allowing operation in demanding environments.
6. Package: Available in a TO-220 package, which provides better heat dissipation.
7. RoHS Compliant: The IRFB3006PBF is lead-free and compliant with RoHS regulations, ensuring environmental safety.
These features make the IRFB3006PBF suitable for applications in power supplies, motor drives, and other power management systems.

Package

The IRFB3006PBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power transistors, providing good thermal performance and easy mounting.

Pinout

The IRFB3006PBF is an N-channel MOSFET with a total of 5 pins. The pin functions are as follows:
1. Gate (G): This pin receives the control voltage to turn the MOSFET on or off.
2. Drain (D): This pin is the output where the load is connected and through which the current flows when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit for the current flow.
The additional two pins are for:
4. Tab/Heatsink: Used for thermal management, facilitating heat dissipation.
5. Body Diode: While not a separate pin, the device internally includes a body diode which provides reverse current flow when the MOSFET is off.
This MOSFET features a low on-resistance and high current handling capabilities, making it suitable for various applications in power management and switching.

Manufacturer

The IRFB3006PBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in automotive, industrial power control, and security technologies, providing a broad range of products including power semiconductors, microcontrollers, and sensors. The company focuses on enhancing energy efficiency, connectivity, and safety across various applications, making significant contributions to areas such as automotive electronics, renewable energy, and the Internet of Things (IoT). Infineon is headquartered in Neubiberg, Germany, and has a strong presence in the semiconductor market worldwide.

Application

The IRFB3006PBF is a N-channel MOSFET commonly used in applications such as motor control, DC-DC converters, power supplies, and inverters. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Its robust design makes it ideal for automotive, industrial, and renewable energy systems.

Equivalent

The IRFB3006PBF is a N-channel MOSFET. Equivalent products include:
1. STP300N10F6
2. AUIRF3006
3. FQP30N10
4. IRF3004
5. PSMN2R8-80BS
Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility for your application.

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