IRF9Z34NPBF

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IRF9Z34NPBF

MOSFET P-CH 55V 19A TO220AB

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 19A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 100mOhm @ 10A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 620 pF @ 25 V
PowerDissipation(Max) 68W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRF9Z34NPBF is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is designed for use in power management applications. It is part of the N-channel MOSFET family, which allows it to effectively switch and amplify electronic signals.
Key features include:
- Voltage Rating: Typically, it can handle high voltages, making it suitable for power supply circuits.
- Low On-Resistance: This minimizes power loss and improves efficiency in switching applications.
- Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
- Thermal Management: Designed to withstand thermal stress, it often includes a package that aids in heat dissipation.
Applications include power converters, motor control, and other circuits where efficient switching is critical. When using the IRF9Z34NPBF, engineers should consider its specifications to ensure compatibility with their circuit requirements. Always refer to the manufacturer's datasheet for detailed electrical characteristics and ratings.

Features

The IRF9Z34NPBF is a N-channel MOSFET designed for various switching and amplification applications. Key features include:
- Voltage Rating: Maximum drain-source voltage (Vds) of 34V, allowing it to handle moderate voltage levels.
- Current Rating: Continuous drain current (Id) up to 55A, enabling efficient performance in high-current applications.
- RDS(on): Low on-resistance (typically around 8mΩ at Vgs = 10V), which minimizes power losses during operation.
- Gate Threshold Voltage (Vgs(th)): Typically ranges from 1V to 3V, allowing for easy drive with low-voltage control signals.
- Package Type: Available in TO-220 packaging, facilitating heat dissipation and ease of mounting.
- Fast Switching: Suitable for high-speed switching applications, contributing to better efficiency in power conversion.
The IRF9Z34NPBF is ideal for power management, motor control, and DC-DC converters in consumer and industrial electronics. Always refer to the datasheet for detailed specifications and thermal characteristics.

Package

The IRF9Z34NPBF is packaged in a TO-220 format.

Pinout

The IRF9Z34NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to this pin turns the device on or off.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. The source is where the current enters when the MOSFET is in the on state.
The IRF9Z34NPBF is designed for switching and amplification applications in power electronics, offering features like a low on-resistance and high-speed switching capabilities. It is commonly used in power management circuits, motor drivers, and other applications requiring efficient control of electrical power.

Manufacturer

The IRF9Z34NPBF is manufactured by Infineon Technologies AG, a global semiconductor company based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on applications in automotive, industrial, and communication sectors, emphasizing energy efficiency and performance in its products. Infineon is known for its innovative technologies in power management and has a significant presence in the global semiconductor market.

Application

The IRF9Z34NPBF is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and load switching. Its low on-resistance and high efficiency make it suitable for use in consumer electronics, automotive systems, and industrial equipment, where efficient switching and thermal performance are critical.

Equivalent

The IRF9Z34NPBF is an N-channel MOSFET. Equivalent products include:
1. IRF9Z34N – Similar specifications but without the lead-free designation.
2. STP9NK30Z – Comparable voltage and current ratings.
3. BSS123 – Smaller package, similar voltage rating but lower current capability.
4. NTPF30N06 – Similar characteristics for different applications.
Always verify datasheets for specific requirements and parameters.

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