IRF8010PBF

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IRF8010PBF

MOSFET N-CH 100V 80A TO220AB

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15mOhm @ 45A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3830 pF @ 25 V
PowerDissipation(Max) 260W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRF8010PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 50A, making it suitable for power management in various electronic circuits. The device offers low on-resistance (R_DS(on)), typically around 0.08 ohms, which enhances its efficiency by reducing power loss during operation.
This MOSFET is packaged in a TO-220 form, facilitating effective heat dissipation for high-power applications. The IRF8010PBF is characterized by fast switching speeds, making it ideal for applications such as DC-DC converters, motor drivers, and other power management systems.
Additionally, it is RoHS compliant, ensuring it meets environmental standards for hazardous materials. Overall, the IRF8010PBF is an excellent choice for engineers seeking reliability and performance in their power electronic designs.

Features

The IRF8010PBF is an N-channel MOSFET known for its high efficiency and reliability in various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 60A, providing significant current handling capabilities.
3. On-Resistance: The R_DS(on) is low, typically around 0.045 ohms, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching at lower gate voltages.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. High-Speed Switching: Suitable for fast switching applications, including power supplies and motor control circuits.
7. RoHS Compliant: The device is compliant with the Restriction of Hazardous Substances directive, ensuring environmental safety.
These features make the IRF8010PBF a popular choice for power management in various electronic devices.

Package

The IRF8010PBF is typically packaged in a TO-220 form factor. This package type features three leads and is designed for efficient heat dissipation, making it suitable for high-power applications.

Pinout

The IRF8010PBF is an N-channel MOSFET with a total of 4 pins.
Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate relative to the source turns the MOSFET on (conducting state) or off (non-conducting state).
2. Drain (D): The drain pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for voltage at the gate.
4. Body Diode: Although not a separate pin, the internal body diode allows current to flow from the source to the drain when the MOSFET is off, which can be useful in certain applications.
The IRF8010PBF is designed for high-speed switching and can handle high current and voltage, making it suitable for power management and switching applications.

Manufacturer

The IRF8010PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Germany, specializing in automotive, industrial power control, and security technologies. They develop a wide range of products, including power semiconductors, microcontrollers, and sensors, catering to various sectors such as automotive, industrial automation, and the Internet of Things (IoT). Infineon is known for its innovation in power management and energy efficiency solutions, contributing to advancements in sustainable technology.

Application

The IRF8010PBF is a high-speed N-channel MOSFET primarily used in power switching applications. Its key application areas include DC-DC converters, motor controllers, power management systems, and inverters for renewable energy systems. It is also suitable for use in automotive applications, industrial equipment, and various consumer electronics requiring efficient power conversion and control.

Equivalent

The IRF8010PBF is an N-channel MOSFET. Equivalent products include the STP75NF75, IRF840, and FDPF75N06. Always ensure that the voltage, current ratings, and package types match your specific requirements when considering substitutes.

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