IRF7759L2TRPBF

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IRF7759L2TRPBF

IRF7759 - 12V-300V N-CHANNEL POW

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Bảo hành 365 ngày

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Thông số kỹ thuật

Supplier Rochester Electronics, LLC
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 26A (Ta), 375A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.3mOhm @ 96A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 300 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 12222 pF @ 25 V
PowerDissipation(Max) 3.3W (Ta), 125W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DirectFET™ Isometric L8

Tổng quan

Description

The IRF7759L2TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. With a low on-resistance (RDS(on)) and high-speed switching capabilities, it is ideal for use in DC-DC converters, motor control, and other power electronics circuits. The device features a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 52A, making it suitable for various power applications.
The IRF7759L2TRPBF has a low gate threshold voltage (VGS(th)), allowing for easier drive circuitry and improved efficiency. Its package is typically TO-220, providing effective thermal performance and easy mounting on heat sinks. Additionally, the part is RoHS compliant, ensuring it meets environmental regulations.
Overall, the IRF7759L2TRPBF is an excellent choice for designers seeking reliable and efficient MOSFETs in demanding power applications.

Features

The IRF7759L2TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) of up to 40A, making it ideal for high-current applications.
3. R_DS(on): The on-resistance (R_DS(on)) is very low, typically around 9mΩ at a gate-source voltage (V_GS) of 10V, allowing for efficient operation with minimal heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, enabling it to be driven by low-voltage control signals.
5. Package: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching Speed: The device features high-speed switching capabilities, making it suitable for applications such as DC-DC converters and motor drivers.
These attributes make the IRF7759L2TRPBF ideal for various power management applications across industrial and consumer electronics.

Package

The IRF7759L2TRPBF is packaged in a SO-8 (Small Outline 8-lead) surface-mount package. This compact package design is suitable for space-constrained applications and provides efficient thermal performance.

Pinout

The IRF7759L2TRPBF is a power MOSFET with a total of 8 pins. Here are the pin functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S) - The terminal through which the current flows into the MOSFET when it is on.
The specific pin configuration and additional pins may include:
4. Tab - May serve as a drain connection for thermal management.
5. Additional pins may be used for various functionalities depending on the specific package.
The IRF7759L2TRPBF is typically used in applications such as power management, motor control, and switching regulators. It is designed for high efficiency and fast switching speeds. Always refer to the datasheet for detailed specifications and pin assignments.

Manufacturer

The IRF7759L2TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and performance optimization. Infineon is known for its innovative products and commitment to sustainability, making it a key player in the semiconductor sector.

Application

The IRF7759L2TRPBF is a N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, electric vehicle systems, power supply circuits, and motor control. This device is also suitable for synchronous rectification and high-efficiency switching applications due to its low on-resistance and fast switching capabilities.

Equivalent

The IRF7759L2TRPBF is a high-voltage N-channel MOSFET. Equivalent products include:
1. STP30NF10L - STMicroelectronics
2. FDP30N10 - ON Semiconductor
3. BTA30N10 - Vishay
4. IRF3205 - International Rectifier
Always verify specifications such as voltage, current, and RDS(on) before substitution.

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