IRF7342PBF

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IRF7342PBF

MOSFET 2P-CH 55V 3.4A 8-SOIC

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 55V
Current-ContinuousDrain(Id)@25°C 3.4A
RdsOn(Max)@IdVgs 105mOhm @ 3.4A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 38nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 690pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Tổng quan

Description

The IRF7342PBF is a N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (RDS(on)) and fast switching speeds, making it suitable for use in power supplies, motor drives, and other electronic circuits that require efficient power conversion. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 60A, it can handle significant power loads. The device is packaged in a TO-220 format, which aids in heat dissipation and simplifies thermal management. Its gate threshold voltage (VGS(th)) typically ranges from 1V to 2.5V, allowing for easy interfacing with logic-level control signals. The IRF7342PBF is also characterized by its ruggedness and reliability, making it a popular choice in automotive, industrial, and consumer electronics applications. Additionally, it is RoHS-compliant, indicating it is free from hazardous substances. Overall, the IRF7342PBF is a versatile component for modern electronic designs requiring robust performance.

Features

The IRF7342PBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium-voltage applications.
2. Continuous Drain Current: It supports a continuous drain current (I_D) of up to 55A, allowing it to handle substantial loads.
3. Low R_DS(on): The device features a low on-resistance (R_DS(on)) of approximately 10 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power losses during operation.
4. Fast Switching Speed: The MOSFET is characterized by rapid switching capabilities, enhancing efficiency in PWM applications.
5. Thermal Management: It comes in a TO-220 package, which allows for effective heat dissipation, making it suitable for high-power applications.
6. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically between 2V to 4V, enabling it to be driven with lower gate voltages.
These features make the IRF7342PBF ideal for applications in power supplies, motor drives, and other high-efficiency circuits.

Package

The IRF7342PBF is packaged in a TO-220 form factor. This package type is known for its ability to dissipate heat effectively, making it suitable for power applications.

Pinout

The IRF7342PBF is a N-channel MOSFET typically used in power switching applications. It features a total of 8 pins with the following functions:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or negative side of the power supply.
Pin configuration may vary slightly depending on the package type, but commonly it follows a standard arrangement for MOSFETs. The IRF7342PBF is designed for high-speed switching and efficient performance in power management applications, with specifications suitable for handling significant voltage and current levels.

Manufacturer

The IRF7342PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive electronics, and industrial applications. The company focuses on innovative technologies that enhance energy efficiency and enable smart, connected systems. Infineon serves various markets, including automotive, industrial, and communication, and is recognized for its commitment to sustainability and advanced electronic solutions.

Application

The IRF7342PBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drivers, battery management systems, and switching power supplies. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching speed, making it ideal for consumer electronics, automotive systems, and industrial automation.

Equivalent

The IRF7342PBF is an N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. BSS138 - NXP Semiconductors (lower specs)
3. IRLZ44N - International Rectifier (similar specs)
4. FQP30N06L - ON Semiconductor
Always check datasheets for specific electrical characteristics and suitability for your application.

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