IRF640PBF

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IRF640PBF

MOSFET N-CH 200V 18A TO220AB

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 180mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1300 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRF640PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) rating of 9.2A at a temperature of 25°C. With a low on-resistance (RDS(on)) of approximately 0.18 ohms, it ensures minimal power loss during operation, making it suitable for applications such as power supplies, motor drivers, and DC-DC converters.
The IRF640PBF is packaged in a TO-220 format, allowing for effective heat dissipation and easier mounting on heat sinks. It operates efficiently at high speeds, making it ideal for high-frequency applications. Additionally, the device is environmentally friendly as it is lead-free and complies with RoHS standards.
Overall, the IRF640PBF is a reliable choice for designers seeking robust performance in their power electronic circuits.

Features

The IRF640PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, allowing it to handle high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of 9.2A at 25°C, suitable for medium to high-power applications.
3. On-Resistance: The R_DS(on) is low at approximately 0.18 ohms, reducing power loss during operation.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, permitting easy driving with standard logic levels.
5. Package Type: Typically available in TO-220 and other packages, allowing for efficient heat dissipation.
6. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like power supplies and motor drivers.
7. Thermal Performance: It features a high maximum junction temperature of 150°C, enhancing reliability in challenging environments.
These characteristics make the IRF640PBF suitable for various applications in power electronics and automotive systems.

Package

The IRF640PBF is typically packaged in a TO-220 form factor.

Pinout

The IRF640PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It is typically connected to ground or a negative voltage in an N-channel configuration.
The IRF640PBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 9.2A. Its low on-resistance (R_DS(on)) makes it suitable for power switching applications.

Manufacturer

The manufacturer of the IRF640PBF is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the production of a wide range of semiconductor solutions, including power management, sensors, and automotive electronics. The IRF640PBF is an N-channel MOSFET commonly used in power switching applications and offers high-speed operation and efficiency. Infineon focuses on innovation in power semiconductors and is a key player in the automotive, industrial, and Internet of Things (IoT) sectors.

Application

The IRF640PBF is an N-channel MOSFET commonly used in various applications, including power switching, motor control, and power supplies. It is suitable for high-speed switching and can manage significant voltage and current loads, making it ideal for use in industrial automation, automotive systems, and inverter circuits. Its low on-resistance and high efficiency also make it applicable in renewable energy systems, such as solar inverters and battery management systems.

Equivalent

Equivalent products to the IRF640PBF include the IRF640, IRF740, STP16NF06, and FQP30N06. These MOSFETs share similar specifications, such as voltage ratings and current capacities, making them suitable substitutes. Always verify specific parameters, like Rds(on) and Vgs ratings, to ensure compatibility in your application.

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