IRF3808PBF

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IRF3808PBF

MOSFET N-CH 75V 140A TO220AB

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 140A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7mOhm @ 82A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5310 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRF3808PBF is a N-channel MOSFET designed for high-efficiency power management applications, including DC-DC converters, motor drives, and power switches. It features a low on-resistance (R_DS(on)) of 0.0095 ohms at a gate voltage of 10V, enabling minimal power loss and improved thermal performance. With a maximum drain-source voltage (V_DS) of 30V and continuous drain current (I_D) of up to 80A, it is suitable for various high-current applications.
Its fast switching capabilities make it ideal for applications requiring rapid on-off transitions, enhancing overall efficiency. The device is encapsulated in a TO-220 package, providing effective heat dissipation. The "PBF" suffix indicates that it is lead-free, adhering to RoHS standards, making it environmentally friendly.
The IRF3808PBF is popular in power electronics design due to its reliability and performance characteristics, making it a preferred choice for engineers looking to optimize circuit designs without compromising on efficiency or performance.

Features

The IRF3808PBF is a N-channel MOSFET known for its high efficiency and robust performance. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 80A, allowing it to handle significant loads.
3. On-Resistance: It features a low R_DS(on) of approximately 9.5 mΩ at V_GS = 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges between 2 to 4V, enabling efficient switching at lower gate voltages.
5. Package Type: It is available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching Speed: The device exhibits rapid switching capabilities, making it suitable for switching power supplies and inverter applications.
7. RoHS Compliant: It is environmentally friendly and complies with RoHS regulations.
These attributes make the IRF3808PBF ideal for various applications, including power management and automotive systems.

Package

The IRF3808PBF is packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used in power applications for its robust performance.

Pinout

The IRF3808PBF is a Power MOSFET with a total of 8 pins. Its key functions include:
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D): The output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
The pin arrangement is as follows (looking at the package from the top):
1. Gate
2. Source
3. Drain
4. Source
5. Drain
6. Source
7. Gate
8. Gate
The IRF3808PBF is designed for applications requiring high efficiency and low on-resistance, making it suitable for power management and switching applications. Its typical specifications include a maximum V_DS of 40V and I_D of 120A.

Manufacturer

The manufacturer of the IRF3808PBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Munich, Germany. It specializes in the design and manufacturing of a wide range of semiconductor products, including power management, automotive solutions, and digital security technologies. Infineon's portfolio primarily focuses on applications in automotive, industrial, and consumer electronics markets. The company is known for its innovations in power semiconductors and plays a significant role in enabling energy efficiency and sustainability in various electronic applications.

Application

The IRF3808PBF is an N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching power supplies. Its high efficiency and low on-resistance make it suitable for use in automotive, industrial, and consumer electronics, particularly in tasks that require fast switching and high current handling.

Equivalent

The IRF3808PBF is a N-channel MOSFET. Equivalent products include the NTD2955N, STP16NF06, and AO3400. Always verify specifications like V_DS, I_D, R_DS(on), and package type for compatibility in your application.

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