IRF3415PBF

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IRF3415PBF

MOSFET N-CH 150V 43A TO220AB

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 43A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 42mOhm @ 22A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 200 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2400 pF @ 25 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Tổng quan

Description

The IRF3415PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a low on-resistance (R_DS(on)) of around 8 milliohms, allowing for reduced power loss and improved thermal performance in switching applications. This MOSFET operates at a maximum drain-source voltage (V_DS) of 55V and can handle continuous drain currents of up to 90A, making it suitable for power management, DC-DC converters, and motor control in various electronic devices.
The IRF3415PBF has a fast switching speed, which enhances its performance in high-frequency applications. It is housed in a TO-220 package, facilitating effective heat dissipation. Additionally, it is RoHS compliant, ensuring that it meets environmental regulations regarding hazardous substances. Overall, the IRF3415PBF is ideal for applications requiring reliable and efficient power switching.

Features

The IRF3415PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 80A, which allows it to manage significant power loads.
3. R_DS(on): The low on-state resistance (R_DS(on)) of around 7.5 mΩ at a gate-source voltage (V_GS) of 10V minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, facilitating easy drive characteristics.
5. Package Type: Available in TO-220 and DPAK packages, enabling flexibility in thermal management and PCB design.
6. Fast Switching: Its fast switching capabilities make it suitable for high-frequency applications such as DC-DC converters and motor drivers.
These features collectively make the IRF3415PBF an excellent choice for power management in automotive, industrial, and consumer electronics applications.

Package

The IRF3415PBF is typically packaged in a TO-220 package type. This package design provides efficient thermal management and is suitable for power applications, allowing for easy mounting and heat dissipation.

Pinout

The IRF3415PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the Drain and Source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the lower voltage in the circuit.
The IRF3415PBF is designed for high-speed switching and can handle high currents and voltages, making it suitable for various power management applications. Its low on-resistance and fast switching characteristics enhance efficiency in power circuits.

Manufacturer

The IRF3415PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and chip card and security technologies. The company plays a significant role in the development of power management technologies, including MOSFETs, which are used for efficient power conversion and management in various applications. Infineon is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The IRF3415PBF is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, switching power supplies, motor drivers, and high-speed switching applications. Its low on-resistance and high current-handling capacity make it suitable for energy-efficient designs in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The IRF3415PBF is an N-channel MOSFET. Equivalent products include the FDS6910, STP16NF06L, and BSS139. Always verify the specifications like voltage, current ratings, and package type to ensure compatibility in your specific application.

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