IRF135S203

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IRF135S203

MOSFET N-CH 135V 129A TO263-3

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®, StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 135 V
Current-ContinuousDrain(Id)@25°C 129A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8.4mOhm @ 77A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 270 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9700 pF @ 50 V
PowerDissipation(Max) 441W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3-2

Tổng quan

Description

The IRF135S203 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power electronics. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, making it suitable for power management applications, such as DC-DC converters and motor control circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of around 34A at a specific gate-source voltage (V_GS). Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for efficient drive with standard logic levels.
The IRF135S203 is housed in a TO-220 package, facilitating thermal management and easy mounting. Its robust construction and efficiency make it a popular choice in automotive, industrial, and consumer electronics applications. When utilizing this MOSFET, it's essential to consider gate drive requirements and thermal dissipation to ensure reliable operation.

Features

The IRF135S203 is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management tasks.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 50A, allowing it to manage substantial loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 0.05 ohms at a gate-source voltage (V_GS) of 10V, minimizing power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating operation with lower drive voltages.
5. Package Type: Typically available in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: The MOSFET is designed for fast switching applications, enhancing overall efficiency in circuits.
These characteristics make the IRF135S203 suitable for use in power supplies, motor control, and other high-power electronic circuits.

Package

The IRF135S203 is typically packaged in a TO-220 form factor, which is a metal can package designed for high-power applications, allowing for effective heat dissipation.

Pinout

The IRF135S203 is an N-channel MOSFET primarily used in power applications. It typically comes in a TO-220 package, which features three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the current enters the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET to return to ground or the power supply.
The IRF135S203 is designed for high efficiency and can handle high voltage and current, making it suitable for various switching and amplification applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The IRF135S203 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in semiconductor and system solutions for automotive, industrial, and multimarket applications. The company focuses on areas such as power management, automotive safety, and Internet of Things (IoT) technologies. Founded in 1999, Infineon has become a key player in the semiconductor industry, emphasizing innovation and sustainability in its product offerings.

Application

The IRF135S203 is an N-channel MOSFET primarily used in power management applications, including switching power supplies, DC-DC converters, motor drivers, and audio amplifiers. Its high efficiency and fast switching capabilities make it suitable for applications requiring rapid ON/OFF control. Additionally, it is utilized in various industrial and automotive applications for load switching and signal amplification.

Equivalent

The IRF135S203 is a power MOSFET. Equivalent products include the IRF135, IRF140, and IRF150 from International Rectifier, as well as the STP16NF06 from STMicroelectronics and the FQP30N06L from On Semiconductor. Always check specific datasheets for exact specifications and compatibility before substituting.

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