IR2113STRPBF

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IR2113STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 3.3V ~ 20V
LogicVoltage-VILVIH 6V, 9.5V
Current-PeakOutput(SourceSink) 2A, 2A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 25ns, 17ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 16-SOIC (0.295, 7.50mm Width)

Tổng quan

Description

The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed by Infineon Technologies. It features a high gate drive capability, designed to drive N-channel power MOSFETs and IGBTs in half-bridge configurations. This driver IC is equipped with advanced level-shift technology allowing operation up to 600 volts, making it suitable for a wide range of applications such as motor drive inverters, power supplies, and DC-DC converters.
Key features include a floating channel for bootstrap operation, a robust gate drive with under-voltage lockout for both high- and low-side outputs, and matched propagation delay for both channels. It also includes protection features like shoot-through prevention and a shutdown pin for immediate disabling of the output.
The IR2113STRPBF comes in a surface-mount package suited for compact designs, ensuring efficient thermal performance and ease of integration into various electronic systems. Its reliability and performance make it a popular choice in industrial and consumer applications requiring efficient and precise motor control and power management.

Features

The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Its key features include:
1. Voltage Rating: Capable of operating at voltages up to 600V.
2. Output Channels: Provides independent high-side and low-side outputs, which are critical for driving half-bridge, full-bridge, or three-phase inverter configurations.
3. Gate Drive Capability: Features a gate drive output with a peak current of up to 2A, suitable for driving power MOSFETs and IGBTs.
4. Logic Input: Compatible with standard logic levels, allowing for easy interfacing with microcontrollers or DSPs.
5. Propagation Delay: Offers a fast propagation delay of approximately 120 ns, enabling rapid switching operations.
6. Undervoltage Lockout: Includes undervoltage lockout protection for both high-side and low-side outputs to prevent malfunction under low supply voltage conditions.
7. Bootstrap Circuit: Facilitates the use of a bootstrap circuit to enhance high-side gate drive voltage.
8. Package: Available in a 14-pin SOIC (Small Outline Integrated Circuit) package for compact and efficient design integration.
Overall, the IR2113STRPBF is well-suited for applications requiring reliable and efficient gate driving capabilities for high-voltage and high-speed power devices.

Package

The IR2113STRPBF is a surface-mount device that comes in an SOIC (Small Outline Integrated Circuit) package with 16 leads. This type of package is designed for automatic placement and soldering onto printed circuit boards, facilitating compact and reliable electrical connections.

Pinout

The IR2113STRPBF is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is commonly used in applications like motor drives, power supplies, and inverters. The device is housed in a 14-pin SOIC package, and its pin functions are as follows:
1. VB - High-side floating supply voltage.
2. HO - High-side gate drive output.
3. VS - High-side floating supply return.
4. NC - No connection (not internally connected).
5. VCC - Low-side and logic fixed supply voltage.
6. COM - Low-side return.
7. LO - Low-side gate drive output.
8. NC - No connection.
9. LIN - Low-side gate drive logic input.
10. HIN - High-side gate drive logic input.
11. VSS - Logic ground.
12. SD - Shutdown logic input.
13. NC - No connection.
14. NC - No connection.
The IR2113STRPBF supports high switching speeds and is capable of driving high power devices, making it suitable for high-performance power electronics applications.

Manufacturer

The IR2113STRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs, develops, and manufactures a wide range of semiconductor solutions, including microcontrollers, sensors, power semiconductors, and integrated circuits. The company operates globally and serves various sectors such as automotive, industrial, communication, and consumer electronics. Infineon is known for its innovations in energy efficiency, mobility, and security technologies.

Application

The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is primarily used in motor control systems, power supplies, uninterruptible power supplies (UPS), renewable energy systems, and induction heating applications. Its capability to drive high-side and low-side MOSFETs or IGBTs makes it suitable for applications requiring efficient power management and control.

Equivalent

The IR2113STRPBF is a high voltage, high speed power MOSFET and IGBT driver. Equivalent products include:
1. IRS2113STRPBF - A similar part number from the same manufacturer.
2. FAN7393 - From ON Semiconductor, offering similar functionalities.
3. MIC4102 - From Microchip Technology, with similar specifications.
4. UCC27714 - From Texas Instruments, providing comparable features.
Always verify specific parameters and compatibility when selecting equivalents.

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