IPW65R045C7

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IPW65R045C7

46A, 650V, 0.045OHM, N-CHANNEL M

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Description

The IPW65R045C7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It is part of the Infineon CoolMOS family, known for its low on-resistance and reduced switching losses, making it suitable for use in power supplies, converters, and motor drives.
Key features include a voltage rating of 650V and a low drain-source on-resistance (RDS(on)) of approximately 45 mΩ, which helps enhance efficiency in high-voltage applications. The device also boasts fast switching capabilities, enabling it to handle high frequencies in power conversion circuits.
Its rugged design ensures reliable operation under various thermal and electrical conditions. The IPW65R045C7 is often used in applications such as renewable energy systems, industrial power supplies, and electric vehicle drives due to its performance characteristics and thermal stability.
In summary, the IPW65R045C7 is a high-performance MOSFET ideal for demanding power applications requiring efficiency and reliability.

Features

The IPW65R045C7 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 650V.
2. Current Rating: The continuous drain current (I_D) is rated at 45A, making it suitable for high-power applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.045 ohms, which minimizes conduction losses.
4. Fast Switching: Designed for high-speed operation, it has fast switching times, enhancing efficiency in PWM applications.
5. Thermal Performance: With a high maximum junction temperature, it provides excellent thermal stability.
6. Package Type: Available in a TO-247 package, which allows for effective heat dissipation.
7. Applications: Commonly used in power inverters, motor drives, and industrial power supplies.
Overall, the IPW65R045C7 is ideal for applications requiring efficiency, reliability, and high power handling.

Package

The IPW65R045C7 is typically packaged in a TO-247 package type. This configuration is designed for high-power applications, offering efficient thermal performance and ease of mounting.

Pinout

The IPW65R045C7 is an N-channel MOSFET from Infineon Technologies, featuring a total of 4 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The drain pin is where the load current flows out when the MOSFET is on.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply. It is the return path for the load current.
4. Tab (optional): The tab of the package can be used for heat dissipation, often connected to the source.
This device has a maximum voltage rating of 650V, a continuous drain current of up to 45A, and low RDS(on), making it suitable for high-efficiency applications such as power conversion and motor control.

Manufacturer

The IPW65R045C7 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components, including power semiconductors, microcontrollers, and sensors. The company plays a significant role in various sectors such as automotive, industrial electronics, and communication technologies. Infineon is known for its innovation in power management and energy efficiency solutions, contributing to advancements in electric vehicles, renewable energy, and smart power applications. Established in 1999, Infineon has become one of the leading players in the semiconductor industry, focusing on sustainable and smart technology solutions.

Application

The IPW65R045C7 is an N-channel MOSFET used in various applications, including power management, motor control, and industrial automation. It is suitable for switch-mode power supplies, DC-DC converters, and high-efficiency power systems due to its low on-resistance and high voltage rating. Additionally, it's employed in renewable energy systems, such as solar inverters, and electric vehicle drives for efficient power conversion and drive control.

Equivalent

The IPW65R045C7 is a 650V N-channel MOSFET. Equivalent products include the STP65NF06, IRF840, and APT65M60J. Other alternatives may include the FGA65N60 and the LMG1010. Always check specifications like RDS(on), gate charge, and breakdown voltage for compatibility.

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