IPW65R041CFD

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IPW65R041CFD

MOSFETs N-Ch 700V 68.5A TO247-3 CoolMOS CFD2

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

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Packaging Tube
Standard Pack Qty 240

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Description

The IPW65R041CFD is a high-performance N-channel power MOSFET designed for various applications, including power supplies, motor control, and DC-DC converters. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 41A, making it suitable for high-voltage environments. With a low on-state resistance (R_DS(on)) of around 0.041Ω, it offers efficient operation, minimizing power losses during switching tasks.
This MOSFET is part of Infineon's CoolMOS technology, which enhances energy efficiency and thermal performance, allowing for cooler operation in demanding applications. The device is packaged in a TO-220 format, facilitating easy heat dissipation and integration into various electronic designs. The IPW65R041CFD is ideal for industries requiring reliable and efficient power management solutions, contributing to reduced energy consumption and improved overall system performance.

Features

The IPW65R041CFD is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 41A, enabling it to manage significant power loads.
3. Low On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 0.041 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like switch-mode power supplies and converters.
5. Thermal Performance: It features a robust thermal design, with a maximum junction temperature (T_j) of 150°C, allowing for reliable operation in demanding environments.
6. Package Type: Available in a TO-220 package, which provides effective heat dissipation and ease of mounting.
These attributes make the IPW65R041CFD suitable for various applications in power management and motor control.

Package

The IPW65R041CFD is packaged in a TO-247 type configuration, which is a large, robust package suitable for high-power applications. It features three terminals for easy mounting and effective heat dissipation.

Pinout

The IPW65R041CFD is an N-channel power MOSFET manufactured by Infineon Technologies. It has a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET and allows it to turn on and off.
2. Drain (D) - The output terminal where the load is connected; the current flows from the drain when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or the negative side of the power supply.
4. Body (B) - Internal body diode; used in applications where reverse current may flow.
The IPW65R041CFD is designed for high-efficiency applications, featuring a high breakdown voltage (650V) and low on-state resistance (R_DS(on)). It is suited for use in power converters, motor drives, and other high-voltage applications. Always refer to the manufacturer's datasheet for detailed specifications and pinout diagrams.

Manufacturer

The IPW65R041CFD is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer based in Germany, specializing in a range of products such as power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and smart technologies. Infineon's products are widely used in applications ranging from electric vehicles to renewable energy systems, making it a key player in the semiconductor market.

Application

The IPW65R041CFD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including:
1. Power supplies and converters
2. Motor drives and inverters
3. Renewable energy systems (solar inverters, wind power)
4. Industrial automation
5. UPS (Uninterruptible Power Supplies)
6. Electric vehicle charging systems
Its efficiency and high voltage rating make it ideal for applications requiring reliable switching and power management.

Equivalent

The IPW65R041CFD is a 650V N-channel MOSFET. Equivalent products include:
1. FDP65N65 - Fairchild Semiconductor
2. IRF840 - Infineon Technologies
3. STP65NF06 - STMicroelectronics
4. AUIRFS840 - International Rectifier
Always check the specific datasheets for exact electrical characteristics and suitability for your application.

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