IPW65R019C7

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IPW65R019C7

75A, 650V, 0.019OHM, N-CHANNEL M

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Bulk
Series CoolMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 19mOhm @ 58.3A, 10V
Vgs(th)(Max)@Id 4V @ 2.92mA
GateCharge(Qg)(Max)@Vgs 215 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9900 pF @ 400 V
PowerDissipation(Max) 446W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage PG-TO247-3

Tổng quan

Description

The IPW65R019C7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) rating of up to 19A, making it suitable for use in high-voltage and high-current circuits.
This MOSFET is characterized by its low on-state resistance (Rds(on)), which reduces power losses and improves efficiency in power conversions. Its fast switching capabilities make it ideal for applications such as switch-mode power supplies (SMPS), inverters, and motor drives.
The IPW65R019C7 is typically housed in a TO-247 package, ensuring efficient thermal management. It is favored in both consumer electronics and industrial applications due to its robust performance and reliability. Overall, this device is an excellent choice for engineers looking to design efficient and reliable power systems.

Features

The IPW65R019C7 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 19A, suitable for various power management tasks.
3. R_DS(on): It exhibits a low on-resistance of approximately 0.19 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation and reduced power losses.
4. Gate Threshold Voltage (V_GS(th)): It features a gate threshold voltage range of 2V to 4V, allowing for easy driving in different circuit configurations.
5. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications like DC-DC converters and inverters.
6. Package: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
These features make the IPW65R019C7 suitable for various applications in power electronics, including renewable energy systems and industrial drives.

Package

The IPW65R019C7 is packaged in a TO-247 format. This package type is designed for high-power applications, providing excellent thermal performance and allowing for efficient heat dissipation.

Pinout

The IPW65R019C7 is an N-channel power MOSFET manufactured by Infineon Technologies. It features a total of 4 pins, which are typically designated as follows:
1. Gate (G) - This pin controls the switching of the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D) - This pin is where the load current flows into the MOSFET. It is connected to the device or circuit that the MOSFET is controlling.
3. Source (S) - This pin is the terminal through which the load current exits the MOSFET. It is usually connected to ground or the lower potential in the circuit.
The IPW65R019C7 is designed for high-efficiency applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 19A. It is suitable for use in power supplies, motor drives, and other high-voltage applications.

Manufacturer

The IPW65R019C7 is manufactured by Infineon Technologies, a leading global semiconductor company headquartered in Germany. Infineon specializes in designing and producing a wide range of semiconductor and system solutions, which include power semiconductors, microcontrollers, and sensors, targeting various sectors such as automotive, industrial, and consumer electronics. The IPW65R019C7 is a part of their CoolMOS™ series, known for its high efficiency and performance in power management applications, particularly in switch-mode power supplies and industrial applications. Infineon is recognized for its innovation in power electronics and its commitment to sustainability and energy efficiency.

Application

The IPW65R019C7 is an N-channel MOSFET designed for high-efficiency applications. Its main application areas include power conversion systems, such as switch-mode power supplies (SMPS), motor drives, and renewable energy systems (like solar inverters). It is also suitable for automotive applications, high-frequency switching, and general-purpose power management due to its low on-resistance and fast switching capabilities.

Equivalent

The IPW65R019C7 is a 650V MOSFET from Infineon with a RDS(on) of 19 mΩ. Equivalent products include:
1. STMicroelectronics STP65NF75
2. Vishay SiHG65N65F
3. ON Semiconductor NTMFS5C604NL
4. Fairchild FDBL65N65
Always check specific datasheets for exact specifications and performance characteristics as they may vary slightly.

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