IPT60R028G7XTMA1

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IPT60R028G7XTMA1

MOSFET N-CH 600V 75A 8HSOF

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series CoolMOS™ G7
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 28mOhm @ 28.8A, 10V
Vgs(th)(Max)@Id 4V @ 1.44mA
GateCharge(Qg)(Max)@Vgs 123 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4820 pF @ 400 V
PowerDissipation(Max) 391W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-HSOF-8-2

Tổng quan

Description

The IPT60R028G7XTMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a drain-source voltage rating of 60V and a maximum continuous drain current of 28A, making it suitable for various power management tasks in automotive and industrial applications. The device is part of Infineon's OptiMOS series, known for its low RDS(on) (drain-source on-resistance), which reduces power loss and improves thermal performance.
Key characteristics include a fast switching speed, low gate charge, and robust thermal performance, enabling efficient operation in converters, inverters, and power supplies. The package typically used for this MOSFET is DPAK or similar, facilitating ease of integration into circuit designs. Overall, the IPT60R028G7XTMA1 is a reliable choice for engineers seeking high performance in power electronic systems.

Features

The IPT60R028G7XTMA1 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 60V.
2. Current Rating: It supports a continuous drain current of up to 80A, making it suitable for high-power applications.
3. RDS(on): The on-resistance is low, typically around 28mΩ, which reduces power losses during operation.
4. Fast Switching: Enables efficient performance in high-frequency applications.
5. Thermal Performance: Designed for superior thermal management, it can operate at higher temperatures without failure.
6. Package Type: Available in TO-220 package, facilitating easy integration into various applications.
7. Gate Threshold Voltage: Has a low gate threshold voltage, improving compatibility with various driving circuits.
These features make the IPT60R028G7XTMA1 suitable for use in power supplies, motor drives, and other applications requiring efficient switching and thermal performance.

Package

The IPT60R028G7XTMA1 is packaged in a TO-247 format, which is a type of power package designed for high-power applications. This package type features a robust design for effective thermal management and mounts easily to heat sinks, making it suitable for various power electronics applications.

Pinout

The IPT60R028G7XTMA1 is an insulated gate bipolar transistor (IGBT) with a pin count of 5.
Pin Functions:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied to the gate allows the device to turn on.
2. Collector (C): This is the main current-carrying terminal that connects to the load.
3. Emitter (E): This pin serves as the return path for the current and connects to ground in most applications.
4. Collector-Emitter Voltage (VCE): This pin indicates the voltage across the collector and emitter terminals.
5. Thermal Pad/Heatsink: Typically used for thermal management, though not a pin in the traditional sense, it aids in dissipating heat generated during operation.
This IGBT is designed for high-efficiency applications and is suitable for use in power conversion systems such as inverters and converters.

Manufacturer

The IPT60R028G7XTMA1 is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and security. The company is well-known for its products in power management, automotive electronics, and microcontrollers, making it a key player in the electronics and technology sectors. Infineon focuses on providing innovative and efficient solutions to enhance energy efficiency, safety, and connectivity in various industries.

Application

The IPT60R028G7XTMA1 is an N-channel MOSFET, primarily used in power management applications. Key areas include industrial automation, motor drives, power supplies, and renewable energy systems. It is suitable for switching applications in high-efficiency converters, such as DC-DC converters and inverters, due to its low on-resistance and high thermal performance.

Equivalent

The IPT60R028G7XTMA1 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include the NXP (formerly Freescale) MBRF20100CT, the ON Semiconductor FGA25N120, and the STMicroelectronics STGW30H120. Always verify specifications such as voltage, current ratings, and thermal characteristics to ensure compatibility in your application.

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