IPD90N06S4L03ATMA2

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IPD90N06S4L03ATMA2

MOSFET N-CH 60V 90A TO252-31

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Bảo hành 365 ngày

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Thông số kỹ thuật

Supplier Infineon Technologies,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101, OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 90A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.5mOhm @ 90A, 10V
Vgs(th)(Max)@Id 2.2V @ 90µA
GateCharge(Qg)(Max)@Vgs 170 nC @ 10 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 13000 pF @ 25 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3-11

Tổng quan

Description

The IPD90N06S4L03ATMA2 is a N-channel MOSFET designed for high-efficiency power applications. It features a maximum drain-source voltage (V_ds) of 60V and a continuous drain current (I_d) of 90A, making it suitable for various power management tasks, such as in power supplies and motor drives. The device is optimized for low on-resistance (R_ds(on)), which minimizes conduction losses and enhances overall efficiency.
With a fast switching speed, the IPD90N06S4L03ATMA2 is well-suited for applications that require rapid switching, such as in DC-DC converters and h-bridge circuits. Its TO-220 package allows for effective heat dissipation, ensuring reliable performance under high current loads.
This MOSFET is ideal for engineers looking to improve the performance and efficiency of their electronic designs, especially in automotive, industrial, and consumer applications. Overall, the IPD90N06S4L03ATMA2 provides a robust solution for modern power management needs.

Features

The IPD90N06S4L03ATMA2 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for a variety of power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 90A, allowing it to manage significant power loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 3.5 mΩ at V_GS = 10V, enhancing efficiency by minimizing conduction losses.
4. Fast Switching: Designed for fast switching applications, it supports rapid turn-on and turn-off times, making it ideal for power management.
5. Thermal Performance: The MOSFET features a robust thermal design with a maximum junction temperature of 175°C, ensuring reliability under high thermal conditions.
6. Package Type: Typically comes in a TO-220 package, which aids in heat dissipation.
These features make the IPD90N06S4L03ATMA2 suitable for various applications, including power supplies, motor control, and automotive systems.

Package

The IPD90N06S4L03ATMA2 is packaged in a TO-220 form factor, which is a commonly used package type for power MOSFETs. This package allows for efficient heat dissipation and is suitable for high-power applications.

Pinout

The IPD90N06S4L03ATMA2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It typically comes in a TO-220 package, which has a pin count of 3.
Pin Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D) - The drain pin is where the load current enters the MOSFET. It connects to the output of the device being controlled.
3. Source (S) - This pin is the output for the current flowing through the MOSFET and is typically connected to ground or the source of the load.
The IPD90N06S4L03ATMA2 is designed for high-efficiency switching applications, offering low on-resistance and fast switching speeds.

Manufacturer

The IPD90N06S4L03ATMA2 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer that specializes in power and system-on-chip solutions. The company focuses on areas such as automotive, industrial power control, and security technologies. Infineon is known for its innovations in power electronics, including MOSFETs and IGBTs, and its products are widely used in applications ranging from electric vehicles to renewable energy systems. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon plays a significant role in driving advancements in the semiconductor industry.

Application

The IPD90N06S4L03ATMA2 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and switch mode power supplies. Its low on-resistance and high current handling make it suitable for automotive, industrial, and consumer electronics applications, where efficient power switching and thermal performance are critical.

Equivalent

The IPD90N06S4L03ATMA2 is a N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP90NF06
3. FQP90N06L
4. AOD6N06
5. BTA90N06
Always verify specifications like voltage, current, and package type before replacement.

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