IPD80R1K0CE

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IPD80R1K0CE

MOSFETs N-Ch 800V 5.7A DPAK-2

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Packaging MouseReel
Standard Pack Qty 2500

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Description

The IPD80R1K0CE is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications, typically used in power management, switch-mode power supplies, and motor control. It features a maximum drain-source voltage of 800V and a continuous drain current rating of 1A, making it suitable for high-voltage applications. The device is designed for low on-resistance, which helps reduce power losses and improve efficiency.
Key specifications often include a low gate threshold voltage, fast switching speeds, and robust thermal performance, which allows it to handle varying loads and conditions effectively. The IPD80R1K0CE is packaged in a TO-220 or similar format, facilitating easy heat dissipation and integration into various electronic circuits. Overall, this MOSFET is a reliable choice for engineers looking to design efficient power electronic systems.

Features

The IPD80R1K0CE is an N-channel MOSFET designed for high efficiency and performance in power applications. It features a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) rating of 1A. The device offers a low on-resistance (RDS(on)) of approximately 1.0 ohm at a gate-source voltage (VGS) of 10V, which minimizes power losses during operation.
Key features include:
- Fast switching capabilities: Enhances efficiency in switching applications.
- Thermal stability: Capable of handling high thermal loads, making it suitable for various environments.
- Low gate charge: Reduces driving power requirements and improves overall system efficiency.
- Surface mount package: Simplifies integration into compact designs.
Overall, the IPD80R1K0CE is ideal for applications such as power management, motor control, and other electronic circuits requiring reliable switching performance.

Package

The IPD80R1K0CE is typically packaged in a TO-247 format. This packaging is designed for high-power applications, providing good thermal management and robustness.

Pinout

The IPD80R1K0CE is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It features a pin count of 5.
The primary functions of this MOSFET include:
1. Switching Applications: It is designed for efficient switching in power electronics, allowing control of high voltages and currents.
2. Power Management: Employs in power management circuits, such as in converters and inverters.
3. Drive Loads: Used to drive various loads in applications like motor control, lighting, and power regulation.
The MOSFET operates at a maximum drain-source voltage (V_DS) of 80V and can handle continuous drain currents up to 1A. Its low on-resistance (R_DS(on)) ensures minimal power loss during operation, making it suitable for high-efficiency applications.

Manufacturer

The IPD80R1K0CE is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer based in Germany, specializing in various sectors including automotive, industrial power control, and consumer electronics. The company focuses on developing innovative solutions in areas such as power management, security, and sensor technologies. Infineon plays a crucial role in advancing technologies like electric mobility, energy efficiency, and the Internet of Things (IoT).

Application

The IPD80R1K0CE is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Its primary application areas include motor drives, industrial power supplies, renewable energy systems (like solar inverters), and traction systems in electric vehicles. It is suitable for use in high-efficiency power conversion and control systems due to its low on-state voltage drop and fast switching capabilities.

Equivalent

The IPD80R1K0CE is a N-channel MOSFET, and equivalent products include the STP80NF10, IRF3205, and FDB7030. Always check the specifications for voltage, current ratings, and package type to ensure compatibility.

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