IPA60R380C6

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IPA60R380C6

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Thông số kỹ thuật

Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 500
Technology Si
Mounting Style Through Hole
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 10.6 A
Rds On - Drain-Source Resistance 340 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 32 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 31 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 9 ns
Height 16.15 mm
Length 10.65 mm
Rise Time 10 ns
Series CoolMOS C6
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 15 ns
Width 4.85 mm
Part # Aliases SP000660632 IPA6R38C6XK IPA60R380C6XKSA1
Unit Weight 2 g
Type 600 V CoolMOS C6 Power Transistor
Package/Case TO-220FP-3

Tổng quan

Description

The IPA60R380C6 is an insulated gate bipolar transistor (IGBT) designed for high-performance applications, including power conversion and motor control. It features a low on-state voltage drop and fast switching capabilities, which enhance efficiency in power management systems. With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 60A, it is suitable for a variety of applications, such as inverters, converters, and industrial drives.
The "C6" designation typically implies a specific version or technology generation that may offer improved thermal performance or switching characteristics. The device is often used in combination with other power components, and its design supports high reliability and robustness in demanding environments.
Overall, the IPA60R380C6 is well-suited for applications requiring efficient and reliable control of electrical power, making it popular in the automotive, renewable energy, and industrial sectors.

Features

The IPA60R380C6 is a high-performance N-channel MOSFET designed for various applications, including power switching. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 38A at 25°C, ensuring robust performance in demanding conditions.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of around 0.38 ohms, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges typically from 2 to 4V, allowing for easier drive requirements.
5. Fast Switching: The MOSFET features fast switching capabilities, which benefit applications in converters and inverters.
6. Package Type: It is available in a TO-247 package that provides good thermal performance and ease of mounting.
Overall, the IPA60R380C6 is suitable for various industrial and power applications due to its high voltage, current handling, and efficiency.

Package

The IPA60R380C6 is an IGBT (Insulated Gate Bipolar Transistor) packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust performance in demanding environments.

Pinout

The IPA60R380C6 is an N-channel MOSFET from Infineon Technologies, part of the CoolMOS series, designed for high-efficiency applications. It features a pin count of 4.
The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET; applying a positive voltage turns it on.
2. Drain (D): The terminal through which current flows out of the device when it is in the on state.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Tab: Often connected to the source terminal for thermal management.
The device is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 38A, making it suitable for various power conversion applications, including synchronous rectification and power supplies.

Manufacturer

The IPA60R380C6 is manufactured by Infineon Technologies, a leading semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors. The company primarily serves sectors such as automotive, industrial, and consumer electronics, focusing on enhancing energy efficiency and performance in electronic applications. With a strong emphasis on innovation and sustainability, Infineon is known for its commitment to developing technologies that support the growing demands for electrification and digitalization across various industries.

Application

The IPA60R380C6 is an N-channel MOSFET used primarily in power management applications, including DC-DC converters, motor drives, and inverters. It is suitable for industrial automation, renewable energy systems, and electric vehicles due to its high efficiency and low on-resistance. Additionally, it can be employed in switch-mode power supplies (SMPS) and other high-frequency switching applications.

Equivalent

The IPA60R380C6 is a 600V, 380A IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include:
1. IRG4BC30KD - Infineon
2. FGA60N60 - ON Semiconductor
3. MBS60-12 - Mitsubishi Electric
Always verify specifications and application compatibility when considering equivalents.

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