IPA60R280P7

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IPA60R280P7

MOSFETs LOW POWER_NEW

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Description

The IPA60R280P7 is a high-performance N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 60A, making it suitable for high-voltage switching applications. The device has low on-resistance (R_DS(on)) characteristics, which enhances its efficiency and reduces heat generation during operation.
This MOSFET is typically used in power supplies, motor drives, and other applications requiring efficient power management. Its fast switching capabilities make it ideal for use in pulse-width modulation (PWM) applications, contributing to improved efficiency in electronic circuits. The IPA60R280P7 is housed in a TO-247 package, facilitating effective heat dissipation.
Overall, the IPA60R280P7 is a robust choice for engineers looking to integrate high-voltage MOSFETs into their designs, ensuring reliability and performance in demanding conditions.

Features

The IPA60R280P7 is a high-performance MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: This MOSFET can handle continuous drain currents up to 28A, depending on the thermal management.
3. RDS(on): The device exhibits a low on-resistance (RDS(on)) of around 0.28Ω, enhancing efficiency and reducing power losses in switching applications.
4. Fast Switching: It features fast switching capabilities, which are essential for high-frequency applications, improving overall system efficiency.
5. Package: Available in a TO-220 package, facilitating easy heat dissipation and integration into various designs.
6. Applications: Commonly used in power supplies, motor drives, and other high-efficiency power conversion applications.
Overall, the IPA60R280P7 combines high voltage, low on-resistance, and efficient switching, making it a versatile choice in the power electronics market.

Package

The IPA60R280P7 is packaged in a TO-247 format, which is a type of through-hole package. This package design is suitable for high-power applications, offering good thermal performance and ease of mounting on heatsinks for effective heat dissipation.

Pinout

The IPA60R280P7 is an N-channel MOSFET manufactured by Infineon. It features a TO-247 package, which has a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to this pin turns the device on.
2. Drain (D): This pin is connected to the load and carries the current when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to ground or the negative side of the circuit, allowing current to flow from the drain to the source when the MOSFET is activated.
The IPA60R280P7 is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 280A, making it suitable for power conversion and inverter applications.

Manufacturer

The IPA60R280P7 is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company serves various industries, including automotive, industrial, and consumer electronics, and is known for its innovative products that enhance energy efficiency and performance in electronic systems. Infineon is recognized as a leader in power semiconductor technologies, particularly in the realm of IGBT and MOSFET devices, which are critical for applications like renewable energy, electric vehicles, and industrial automation.

Application

The IPA60R280P7 is an N-channel power MOSFET primarily used in various applications such as power supplies, DC-DC converters, motor drives, and inverters. Its high voltage and current handling capabilities make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it is utilized in consumer electronics for efficient power management and thermal management solutions.

Equivalent

The IPA60R280P7 is an IGBT (Insulated Gate Bipolar Transistor) with similar specifications. Equivalent products include the Infineon FGA60N60SMD, the ON Semiconductor MBS60D, and the STMicroelectronics STGWA60. Always check the datasheets for exact specifications and parameters to ensure compatibility.

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