IKW75N60H3

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IKW75N60H3

IKW75N60 - DISCRETE IGBT WITH AN

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Thông số kỹ thuật

Package Bulk
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 225 A
Vce(on)(Max)@VgeIc 2.3V @ 15V, 75A
Power-Max 428 W
SwitchingEnergy 3mJ (on), 1.7mJ (off)
InputType Standard
GateCharge 470 nC
Td(on/off)@25°C 31ns/265ns
TestCondition 400V, 75A, 5.2Ohm, 15V
ReverseRecoveryTime(trr) 190 ns
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Tổng quan

Description

The IKW75N60H3 is a high-voltage, N-channel MOSFET designed for efficient power management in various applications, such as industrial equipment, power supplies, and automotive systems. With a maximum drain-source voltage (V_DS) of 600V, it features a continuous drain current (I_D) rating of 75A, making it suitable for high-power applications. This MOSFET is known for its low on-resistance (R_DS(on)), which minimizes conduction losses and enhances efficiency.
The device utilizes Infineon's latest technology, ensuring high switching speed and thermal performance. It also provides robust protection features, such as avalanche rating and a high-temperature operating range. The IKW75N60H3 is typically housed in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. Its performance characteristics make it a popular choice in applications requiring reliable and efficient power switching.

Features

The IKW75N60H3 is a high-performance N-channel MOSFET from Infineon, designed for power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Continuous Drain Current: Up to 75A at 25°C, enabling high current handling.
3. Low On-Resistance (R_DS(on)): Typically around 0.14 ohms, which reduces power loss and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Approximately 2-4V, suitable for driving with lower gate voltages.
5. Fast Switching Speed: Allows for efficient operation in high-frequency applications.
6. Cool MOS Technology: Designed for low conduction and switching losses, enhancing thermal performance.
7. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
8. Applications: Ideal for use in switch-mode power supplies, motor drives, and inverters.
These features make the IKW75N60H3 suitable for various industrial and consumer electronics applications where efficiency and reliability are critical.

Package

The IKW75N60H3 is typically packaged in a TO-247 form factor. This package type is designed for high-power applications, offering excellent thermal performance and robustness suitable for various electronic applications, including industrial and automotive uses.

Pinout

The IKW75N60H3 is a N-channel MOSFET manufactured by Infineon Technologies. It comes in a TO-247 package, which typically has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow between the drain and source.

2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on. It connects to the high side of the load.
3. Source (S): This pin serves as the return path for the current flowing through the MOSFET when it is conducting. It is typically connected to ground in low-side switching applications.
The IKW75N60H3 is designed for high-voltage applications, with a maximum voltage rating of 600V and a continuous current rating of 75A.

Manufacturer

The IKW75N60H3 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing cutting-edge semiconductor solutions for various applications, including automotive, industrial, power management, and digital security. The company is well-known for its innovative products in areas such as power semiconductors, microcontrollers, and sensor technologies. Infineon aims to create technologies that enable efficient energy use and enhance the performance of electronic devices, contributing to advancements in areas like electric mobility and renewable energy.

Application

The IKW75N60H3 is a power MOSFET used in various applications, including industrial motor drives, power supplies, and renewable energy systems such as solar inverters. It is also suitable for electric vehicles (EVs), lighting control, and consumer electronics requiring efficient switching and high-voltage operation. Its robust performance under high temperatures and fast switching capabilities make it ideal for applications demanding reliability and efficiency.

Equivalent

The IKW75N60H3 is a 600V, 75A IGBT module. Equivalent products include:
1. FGH75N60 - Fairchild
2. B140N60 - Infineon
3. IRG4PH50KD - Infineon
4. MG75J2YS50 - Mitsubishi
Always verify specifications like VCE, current rating, and package type for compatibility.

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