IKP20N60T

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IKP20N60T

IKP20N60 - DISCRETE IGBT WITH AN

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Thông số kỹ thuật

Package Bulk
Series TrenchStop™
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 41 A
Current-CollectorPulsed(Icm) 60 A
Vce(on)(Max)@VgeIc 2.05V @ 15V, 20A
Power-Max 166 W
SwitchingEnergy 310µJ (on), 460µJ (off)
InputType Standard
GateCharge 120 nC
Td(on/off)@25°C 18ns/199ns
TestCondition 400V, 20A, 12Ohm, 15V
ReverseRecoveryTime(trr) 41 ns
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-220-3

Tổng quan

Description

The IKP20N60T is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power electronics applications. It has a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) rating of 20 amps, making it suitable for high-power switching applications.
This MOSFET features low on-resistance (R_DS(on)) and fast switching speeds, which contribute to improved efficiency in power conversion systems, such as inverters and power supplies. The IKP20N60T typically comes in a TO-220 package, allowing for effective heat dissipation during operation.
Its applications include motor control, power management, and other high-voltage circuits. Due to its robust performance characteristics, it is commonly used in industrial and consumer electronic devices. Proper thermal management and gate drive design are essential to ensure optimal performance and reliability in practical applications.

Features

The IKP20N60T is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Capable of handling a maximum drain-source voltage (V_DS) of 600V.
2. Continuous Drain Current: It has a continuous drain current (I_D) rating of 20A at a specified temperature.
3. On-State Resistance: The typical on-resistance (R_DS(on)) is low, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is suitable for standard logic levels, allowing easy interfacing with microcontrollers and other logic devices.
5. Fast Switching Speed: The device supports fast switching times, making it ideal for applications such as switch-mode power supplies and motor drives.
6. Thermal Management: It features a good thermal resistance, which aids in effective heat dissipation.
7. Package Type: Usually available in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the IKP20N60T suitable for various applications in industrial and consumer electronics.

Package

The IKP20N60T is typically available in a TO-247 package type. This package features a robust design suitable for high power applications, providing good thermal performance and ease of mounting.

Pinout

The IKP20N60T is a power MOSFET with a pin count of 3. It typically features a TO-220 package configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected. It allows current to flow from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit for the current flow.
The IKP20N60T is designed for high voltage applications, capable of handling up to 600V with a continuous drain current of 20A.

Manufacturer

The IKP20N60T is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including integrated circuits, discrete components, and sensors. The company serves various sectors such as automotive, industrial, consumer electronics, and communication. With a focus on innovation and sustainability, STMicroelectronics plays a significant role in the development of advanced technologies, including Internet of Things (IoT), smart devices, and energy-efficient solutions.

Application

The IKP20N60T is an N-channel power MOSFET designed for high-voltage applications. Its primary application areas include switching power supplies, motor drivers, and inverter circuits in renewable energy systems. It is also used in industrial equipment, automotive applications, and high-frequency converters due to its capability to handle significant voltage and current levels. Its efficiency and fast switching characteristics make it suitable for various electronic devices that require reliable power management.

Equivalent

The IKP20N60T is an IGBT with a voltage rating of 600V and a current rating of 20A. Equivalent products include the Infineon IGBT 20N60 or the Fairchild FGA20N60. Other potential equivalents are the ON Semiconductor MGD20N60 and the STMicroelectronics STGW20NC60. Always verify specifications for exact compatibility in your application.

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