H26M41103HPR

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H26M41103HPR

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Bảo hành 365 ngày

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Thông số kỹ thuật

Manufacturer JLCPCB Assembly
Package BGA-153_11.5X13.0X0.50P

Tổng quan

Description

H26M41103HPR is a specific model of NAND flash memory produced by Samsung, designed for high-performance applications. It typically features a 3D NAND architecture, which enhances storage density and efficiency. This memory is often used in smartphones, tablets, and other consumer electronics requiring reliable and fast data storage solutions.
Key characteristics include high endurance and reliability, making it suitable for intensive read/write operations. The "HPR" designation indicates it is part of a high-performance line, optimized for speed and access times, catering to demanding applications such as multimedia processing and gaming.
Overall, H26M41103HPR exemplifies advancements in flash memory technology, providing users with improved performance and longevity in their devices.

Features

The H26M41103HPR is a 4 Mbit (512K x 8 bits) NAND flash memory chip commonly used in various electronic applications. Key features include:
1. Memory Type: NAND Flash, suitable for storage solutions.
2. Interface: Serial or parallel interface options for easy integration into devices.
3. Access Time: Fast read and write times, enhancing performance in data-intensive applications.
4. Endurance: Typically supports a high number of program/erase cycles, often around 10,000 cycles.
5. Data Retention: Maintains data integrity for up to 10 years under specified conditions.
6. Low Power Consumption: Designed for efficiency, making it ideal for battery-operated devices.
7. Packaging: Available in various package types to suit different circuit board layouts.
This combination of features makes the H26M41103HPR suitable for applications like mobile devices, consumer electronics, and automotive systems where reliable data storage is crucial.

Package

The H26M41103HPR is a DRAM memory chip packaged in a TSOP (Thin Small Outline Package) format. This package type is designed for high-density memory applications, allowing for efficient use of space on PCBs.

Pinout

The H26M41103HPR is a 4Gb (512MB x 8) NAND Flash memory device. It comes in a 48-ball FBGA (Fine Ball Grid Array) package, which corresponds to a pin count of 48.
The functions of the pins include power supply, ground, data input/output (DQ0-DQ7), command inputs (CLE, ALE), write protect (WP), ready/busy (R/B), and the chip enable (CE) and other control signals. It operates using a typical NAND Flash interface, facilitating command execution for read, write, and erase operations.
Additionally, the device supports features like on-die ECC (Error Correction Code) and multiple plane operations for enhanced performance and reliability in data storage applications.

Manufacturer

The H26M41103HPR is manufactured by Hynix Semiconductor, which is now part of SK Hynix Inc. This company is a South Korean multinational semiconductor manufacturer that specializes in producing memory chips, including DRAM and NAND flash memory. Founded in 1983, SK Hynix is one of the largest memory chip producers in the world, serving various sectors such as consumer electronics, computing, and mobile devices. The company focuses on innovation in memory solutions, contributing to advancements in technology across numerous industries.

Application

The H26M41103HPR is a 4Mbit NAND Flash memory chip, primarily used in applications like mobile devices, consumer electronics, digital cameras, and industrial equipment. It serves for data storage, firmware updates, and multimedia applications, particularly where compact size and efficiency are critical. Additionally, it can be employed in embedded systems and automotive applications for enhanced data storage solutions.

Equivalent

The H26M41103HPR chip, a 1Gb DDR3 SDRAM, has several equivalent products, including the H26M42103HPR, MT41K256M16, and K4B4G1646F. These alternatives may vary in specifications like speed, voltage, and package type, so it's important to check the datasheets for compatibility with your specific application.

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Sản phẩm UPS: Chi phí vận chuyển dao động từ $ 25- $ 45 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

TNT: Chi phí vận chuyển dao động từ $ 25- $ 65 (0,5kg), với thời gian giao hàng ước tính là 3-7 ngày làm việc.

EMS: Chi phí vận chuyển dao động từ $ 30- $ 50 (0,5kg), với thời gian giao hàng ước tính là 7-15 ngày làm việc.

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