FM28V100-TG

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FM28V100-TG

IC FRAM 1MBIT PARALLEL 32TSOP I

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tray
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 1Mb (128K x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 90ns
AccessTime 90 ns
Voltage-Supply 2V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 32-TFSOP (0.465, 11.80mm Width)

Tổng quan

Description

The FM28V100-TG is a non-volatile memory device, specifically a Flash memory chip developed by Fudan Microelectronics Group. It features a storage capacity of 1 Mbit (128 K x 8 bits), making it suitable for various applications requiring compact data storage. The chip operates on a supply voltage range of 2.7V to 3.6V, which is typical for low-power devices.
Key characteristics include fast read and write speeds, with the ability to perform byte-level operations and sector erasing, enhancing flexibility in data management. It supports several command sets for programming and erasing, allowing integration into a variety of electronic systems, including embedded systems, automotive applications, and consumer electronics.
The FM28V100-TG uses a parallel interface for data communication, which simplifies integration with microcontrollers and other digital devices. With its robust performance and reliability, it is ideal for applications requiring persistent storage, such as firmware updates and configuration data retention. Overall, the FM28V100-TG provides a reliable solution for developers needing efficient and compact memory solutions.

Features

The FM28V100-TG is a 1 Mbit (128K x 8) Flash memory device designed for embedded systems. Key features include:
1. Technology: Non-volatile, EEPROM-like architecture with Flash memory technology.
2. Interface: Parallel interface for easy integration with microcontrollers and other digital circuits.
3. Access Time: Offers a fast access time of 70 ns or 90 ns, ensuring quick data retrieval.
4. Power Supply: Operates at a voltage range of 2.7V to 3.6V, suitable for low-power applications.
5. Endurance: Supports up to 100,000 write/erase cycles, making it reliable for repeated use.
6. Data Retention: Guarantees data retention of up to 20 years, ensuring longevity of stored information.
7. Programming: Byte or word programming capability, allowing flexible data handling.
8. Package Options: Available in various packages, including DIP and SOP, for versatile mounting options.
These features make the FM28V100-TG suitable for a range of applications, including automotive, industrial, and consumer electronics.

Package

The FM28V100-TG is packaged in a 32-pin TSOP (Thin Small Outline Package) format. This type of package is designed for surface-mount applications, providing a compact footprint suitable for various electronic devices.

Pinout

The FM28V100-TG is a 1 Megabit (128K x 8) Ferroelectric RAM (FRAM) memory device. It features a total of 32 pins. The primary functions of these pins include:
1. Address Inputs (A0-A16): Used to select the memory location for read/write operations.
2. Data Inputs/Outputs (D0-D7): Bidirectional data bus for inputting or outputting data.
3. Chip Enable (CE): Activates the memory chip for operations.
4. Write Enable (WE): Enables writing to the memory.
5. Output Enable (OE): Allows data outputs to be driven onto the bus.
6. VCC: Power supply input.
7. VSS: Ground connection.
8. Hold and Write Protect (WP): Functionality for hold status and write protection.
The FM28V100-TG is notable for its non-volatile memory capability, low power consumption, and high endurance compared to traditional flash memory.

Manufacturer

The FM28V100-TG is manufactured by Fujitsu Semiconductor. Fujitsu, a part of the larger Fujitsu Group, is a prominent Japanese multinational company that specializes in information technology services and products. Founded in 1935, Fujitsu has a diverse portfolio that includes semiconductors, computer hardware, and software solutions. The FM28V100-TG is a non-volatile memory device, specifically a 1 Megabit (128K x 8) Flash memory, used in various applications such as consumer electronics and industrial devices. Fujitsu Semiconductor focuses on developing innovative semiconductor solutions, catering to the growing demands of the electronics industry and contributing to advancements in technology.

Application

The FM28V100-TG is a non-volatile memory device primarily used in embedded systems for applications such as industrial automation, automotive electronics, telecommunications, and consumer electronics. It serves as a data storage solution for firmware, configuration settings, and critical data retention in environments where power loss may occur. Its fast access times and low power consumption make it suitable for applications needing reliable and efficient memory.

Equivalent

The FM28V100-TG is a non-volatile memory chip. Equivalent products include:
1. AT28C010 - Atmel
2. M29F010 - STMicroelectronics
3. 29F010 - Micron
4. AM29F010 - AMD
These alternatives offer similar features and memory configurations suitable for applications requiring Flash memory. Always confirm compatibility for specific use cases.

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