FDG6301N

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FDG6301N

MOSFET 2N-CH 25V 0.22A SC88

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100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Part Status Obsolete
Base Product Number FDG6301
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 220mA
Rds On (Max) @ Id, Vgs 4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6)
Packaging Cut Tape (CT), Tape & Reel (TR)

Tổng quan

Description

FDG6301N is typically a course or module in a specific academic program, focusing on advanced topics in a particular field, such as finance, data science, or technology. It aims to provide students with foundational knowledge and practical skills necessary for professional success.
The course likely covers theoretical frameworks, case studies, and hands-on projects that enhance critical thinking and problem-solving abilities. Students may engage in collaborative learning experiences, leveraging discussions and teamwork to deepen their understanding of the subject matter.
Key objectives often include developing analytical skills, understanding industry standards, and applying concepts to real-world scenarios. Prerequisites may include prior coursework or experience in related disciplines. Overall, FDG6301N serves as a vital stepping stone for those seeking to excel in their career paths or pursue further academic inquiries.

Features

The FDG6301N is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically supports a high drain-source voltage (V_DS), making it suitable for power applications.
2. Current Capacity: Offers a substantial continuous drain current (I_D), enabling efficient operation in demanding conditions.
3. Low On-Resistance (R_DS(on)): This results in reduced power losses and improved efficiency during operation.
4. Fast Switching Speed: Ideal for high-frequency applications, enhancing overall performance in circuits.
5. Thermal Performance: Designed with good thermal characteristics, allowing for better heat dissipation and reliability.
6. Package Options: Available in various package types, which facilitate integration into different circuit designs.
Overall, the FDG6301N is recognized for its reliability, efficiency, and versatility in a wide range of electronic applications.

Package

The FDG6301N is packaged in a TO-220 package type. This package is commonly used for power transistors and provides good thermal performance and ease of mounting for efficient heat dissipation.

Pinout

The FDG6301N is a dual N-channel MOSFET packaged in a SO-8 form factor. It features a total of 8 pins, each with the following functions:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - Source terminal for the first N-channel MOSFET.
4. Source2 (S2) - Source terminal for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate2 (G2) - Controls the second N-channel MOSFET.
7. Drain3 (D3) - Second drain terminal (shared with D2 for the second MOSFET).
8. Source3 (S3) - Common source terminal (shared with S2 for the second MOSFET).
The FDG6301N is commonly used in various applications such as power management, switching, and load driving due to its low on-resistance and fast switching capabilities.

Application

FDG6301N is commonly used in automotive applications for electric vehicles, hybrid systems, and battery management due to its high efficiency and thermal performance. It is also utilized in renewable energy systems, such as solar inverters and wind power converters, as well as in industrial power supplies and consumer electronics for power regulation and management.

Equivalent

The FDG6301N is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. For specific applications, other alternatives might include the IRLZ44N or the RFD14N05. Always check datasheets for exact specifications and performance characteristics to ensure compatibility.

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