FDD18N20LZ

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FDD18N20LZ

MOSFET N-CH 200V 16A DPAK

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 125mOhm @ 8A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1575 pF @ 25 V
PowerDissipation(Max) 89W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Tổng quan

Description

The FDD18N20LZ is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the N-channel MOSFET family, meaning it conducts when a positive voltage is applied to the gate relative to the source. This specific model is rated for a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A, making it suitable for various applications, including power supplies, motor control, and other switching applications.
The FDD18N20LZ features low on-resistance, which minimizes power losses during operation, improving overall efficiency. Its fast switching capabilities allow for rapid changes in state, making it ideal for high-frequency applications. The device is housed in a TO-220 package, facilitating efficient thermal management and ease of mounting.
In summary, the FDD18N20LZ is a versatile and efficient power MOSFET suitable for various high-voltage and high-current applications in modern electronic circuits.

Features

The FDD18N20LZ is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Handling: It can handle continuous drain currents up to 18A at a case temperature of 25°C.
3. R_DS(on): The on-resistance is low (typically around 0.18Ω), which helps minimize power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for compatibility with lower voltage drive circuits.
5. Package: It comes in a TO-220 package, which provides effective thermal dissipation.
6. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications like DC-DC converters, inverters, and motor drives.
Overall, the FDD18N20LZ is designed for performance and efficiency in power management systems.

Package

The FDD18N20LZ is typically packaged in a TO-220 form factor, which is a standard package for power MOSFETs. This package allows for effective heat dissipation and is commonly used in applications requiring high power handling.

Pinout

The FDD18N20LZ is a N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The drain pin connects to the load. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply.
The remaining two pins are typically for the tab or heat sink. This MOSFET is designed for applications that require high efficiency and fast switching, such as power management and motor control. The specifications include a maximum drain-to-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A.

Manufacturer

The FDD18N20LZ is a power MOSFET manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of semiconductor solutions, including power management, analog, sensors, logic, timing, and RF products. The company serves various industries, including automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on developing innovative technologies that enhance energy efficiency and performance in electronic systems.

Application

The FDD18N20LZ is an N-channel MOSFET primarily used in power management applications. Its areas of application include:
1. Switching Power Supplies: For efficient voltage regulation.
2. DC-DC Converters: Inverters and converters for power electronics.
3. Motor Control: Used in driving DC motors and other inductive loads.
4. LED Drivers: For managing high current levels in lighting applications.
5. Automotive Electronics: In electric vehicle power systems and control circuits.

Equivalent

The FDD18N20LZ is an N-channel MOSFET with a 200V, 18A rating. Equivalent products include the IRF820, STP20NF20, and MTP20N20E. Always check the specific parameters like RDS(on), VGS(th), and package type to ensure compatibility for your application.

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