FDA28N50F

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FDA28N50F

MOSFET N-CH 500V 28A TO3PN

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tube
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 175mOhm @ 14A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 105 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 5387 pF @ 25 V
PowerDissipation(Max) 310W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PN

Tổng quan

Description

The FDA28N50F is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high efficiency and performance in various electronic applications. It features a maximum drain-source voltage (V_DS) of 500V, a continuous drain current (I_D) rating of 28A, and a low gate threshold voltage, making it suitable for high-voltage switching applications such as power supplies, motor drives, and inverter circuits.
Key specifications typically include low on-resistance (R_DS(on)), which reduces power loss during operation, and fast switching times, enabling efficient energy conversion. The component is often packaged in a robust TO-220 or similar format, facilitating effective thermal management.
Overall, the FDA28N50F is ideal for engineers seeking a reliable and efficient solution for high-voltage applications in power electronics.

Features

The FDA28N50F is a high-voltage MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 28A, allowing for substantial power handling capabilities.
3. Low On-Resistance: The device showcases a low on-resistance (R_DS(on)), typically around 0.14Ω, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: Designed for fast switching applications, it offers quick turn-on and turn-off characteristics.
5. Thermal Performance: The MOSFET has a low thermal resistance, enabling effective heat dissipation, which is crucial for reliability in high-power applications.
6. Package Type: It usually comes in TO-220 or similar packages, facilitating easy mounting and heat sink integration.
These features make the FDA28N50F suitable for use in power supplies, motor drives, and other high-voltage circuits.

Package

The FDA28N50F is typically packaged in a TO-220 style package. This package type is commonly used for power transistors and provides effective heat dissipation, making it suitable for high-power applications.

Pinout

The FDA28N50F is a power MOSFET with a total of 28 pins. It is designed for high voltage and high current applications, typically in power management and switching applications. The key functions of its pins include:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal where current enters the MOSFET when it is on.
The FDA28N50F features a N-channel configuration, allowing it to handle high voltage (up to 500V) and significant current levels, making it suitable for various applications in power electronics. The specific pin arrangement and additional functionality may vary depending on the manufacturer's datasheet, so it is advisable to refer to the datasheet for detailed pin configurations and specifications.

Manufacturer

The FDA28N50F is manufactured by Fairchild Semiconductor, which is a subsidiary of ON Semiconductor. Fairchild Semiconductor is known for its production of a wide range of semiconductor products, including power transistors, analog devices, and integrated circuits. The company specializes in providing high-performance semiconductor solutions primarily for the automotive, industrial, and consumer electronics markets. Fairchild's products are integral in enhancing energy efficiency and power management in various applications.

Application

The FDA28N50F is a high-voltage, N-channel MOSFET primarily used in power electronics applications. Its areas of application include power supplies, motor drives, and inverters for renewable energy systems. It is also suitable for industrial automation, electric vehicles, and lighting control systems, where efficient switching and high reliability are essential.

Equivalent

The FDA28N50F is a power MOSFET typically used in high-voltage applications. Equivalent products include:
1. STP28NF50 (STMicroelectronics)
2. IRF2807 (Infineon)
3. MTP28N50E (ON Semiconductor)
4. BUK7Y28-50 (NXP Semiconductors)
Always verify specific parameters like voltage, current, and RDS(on) to ensure compatibility for your application.

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