FCH125N60E

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FCH125N60E

MOSFET N-CH 600V 29A TO247-3

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Bảo hành 365 ngày

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Thông số kỹ thuật

Series SuperFET® II
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2990 pF @ 380 V
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number FCH125

Tổng quan

Description

The FCH125N60E is a high-performance N-channel MOSFET designed for power applications. With a voltage rating of 600V and a current rating of 125A, it is suitable for use in various applications such as power supplies, converters, and motor drives. The device features low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency.
Its fast switching capabilities make it ideal for high-frequency applications, while its thermal performance ensures reliable operation under demanding conditions. The FCH125N60E is housed in a TO-247 package, allowing for efficient heat dissipation and ease of integration into circuits.
Overall, the FCH125N60E is an excellent choice for engineers seeking a robust MOSFET for high-voltage and high-current applications, supporting both energy efficiency and performance reliability.

Features

The FCH125N60E is a high-voltage N-channel MOSFET designed for efficient power switching applications. Key features include:
1. Voltage Rating: It can withstand up to 600V, making it suitable for high-voltage applications.
2. Current Rating: The device has a continuous drain current rating of 125A, allowing it to handle substantial loads.
3. RDS(on): It features a low on-resistance (typically around 0.18Ω), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-to-source threshold voltage is typically between 2-4V, facilitating easy driving with low-voltage logic levels.
5. Package: Available in a TO-247 package, offering good thermal performance and ease of mounting.
6. Switching Speed: Designed for fast switching, enabling high-frequency operation in power electronic circuits.
7. Applications: Commonly used in switch-mode power supplies, motor drivers, and DC-DC converters.
This combination of features makes the FCH125N60E a reliable choice for various power management and conversion applications.

Package

The FCH125N60E is typically packaged in a TO-220 format, which is a standard type of package for power MOSFETs. This packaging provides good thermal performance and is suitable for mounting on heatsinks for efficient heat dissipation.

Pinout

The FCH125N60E is a N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package, which has a pin count of three. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D) - This is the output pin where the current flows out when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power source.
The FCH125N60E is characterized by its high voltage (600V) and a maximum current rating of 125A, making it suitable for applications such as power supplies, motor controllers, and high-frequency switching converters.

Manufacturer

The FCH125N60E is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient technologies and products. The company designs and manufactures a wide range of electronic components, including power management, analog, logic, timing, interface, and discrete devices. ON Semiconductor serves various markets, including automotive, industrial, telecommunications, computing, and consumer electronics, emphasizing sustainability and innovation in its product offerings. The company is headquartered in Phoenix, Arizona, and operates internationally, providing solutions that help improve energy efficiency and performance in electronic applications.

Application

The FCH125N60E is an N-channel MOSFET primarily used in power electronics applications such as switch mode power supplies (SMPS), DC-DC converters, motor drives, and inverters. Its high voltage rating (600V) and low RDS(on) make it suitable for applications requiring efficient switching and thermal performance in industrial, automotive, and renewable energy systems.

Equivalent

The FCH125N60E is a MOSFET with a voltage rating of 600V and a current rating of 125A. Equivalent products include the STP125N60M2, IRFPG60, and IXFH40N60P. Make sure to verify specifications such as R_DS(on), package type, and thermal characteristics when considering alternatives.

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