FCD850N80Z

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FCD850N80Z

MOSFET N-CH 800V 6A DPAK

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Series SuperFET® II
Part Status Active
Base Product Number FCD850
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1315 pF @ 100 V
Power Dissipation (Max) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Cut Tape (CT), Tape & Reel (TR)

Tổng quan

Description

The FCD850N80Z is a high-performance N-channel MOSFET designed for various power management applications. It features a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 850A, making it suitable for high-voltage and high-current applications. The device is optimized for efficiency, with low on-resistance (Rds(on)) which minimizes power loss during operation.
Key specifications include a fast switching speed, which enhances performance in switching applications, and a robust thermal performance, allowing for effective heat dissipation. Common applications include power supplies, motor drives, and automotive systems, particularly in electric vehicles.
The FCD850N80Z is packaged in a TO-247 format, facilitating easy integration into circuit designs. Its reliability and efficiency make it a popular choice among engineers looking for durable and effective MOSFET solutions in demanding environments.

Features

The FCD850N80Z is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 8.5A, which supports various load requirements.
3. Low RDS(on): The device offers a low on-resistance (RDS(on)) value, typically around 0.85Ω, enhancing efficiency and reducing power loss during operation.
4. Fast Switching: It provides rapid switching capabilities, which is essential for applications in power conversion and switching power supplies.
5. Thermal Performance: The MOSFET features a robust package that aids in effective heat dissipation, ensuring reliable operation at elevated temperatures.
6. Applications: It is suitable for use in industrial automation, power supplies, motor drives, and renewable energy systems.
Overall, the FCD850N80Z balances high performance with reliability, making it a versatile choice for engineers.

Package

The FCD850N80Z is packaged in a TO-220 configuration. This type of package offers good thermal performance and is suitable for high-power applications, allowing for easy mounting to heatsinks for effective heat dissipation.

Pinout

The FCD850N80Z is an N-channel MOSFET transistor. It typically comes in a TO-220 package, which has a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is where the load current flows into the MOSFET. It connects to the higher potential in the circuit.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit, allowing current to exit the MOSFET.
The FCD850N80Z is designed for applications requiring high voltage and current handling, making it suitable for power supply circuits, motor drivers, and other high-power applications.

Manufacturer

The FCD850N80Z is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was known for its design and production of a wide range of semiconductor devices, including power MOSFETs, analog ICs, and more. The company specializes in providing innovative solutions in power management, signal processing, and other semiconductor applications. ON Semiconductor, the parent company, focuses on energy-efficient electronics and serves various industries, including automotive, industrial, and consumer electronics.

Application

The FCD850N80Z is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor drives, DC-DC converters, and electronic lighting. Its features make it suitable for industrial automation, renewable energy systems, and electric vehicles, where efficient switching and thermal performance are crucial.

Equivalent

The FCD850N80Z is an N-channel MOSFET with similar specifications. Equivalent products include:
1. IRF840
2. STP80NF80
3. MTP80N80
4. FQP80N80
5. BTA80N80
Ensure to check datasheets for exact specifications like Vds, Id, and Rds(on) to confirm compatibility for your specific application.

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