DMN10H220LE-13

The DMN10H220LE-13 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for applications requiring efficient switching and amplification of electrical signals. Key features include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of 10A, and a low on-resistance (R_DS(on)) of approximately 0.220 ohms, allowing for reduced power loss during operation.
The device is housed in a TO-220 package, which provides excellent thermal performance, making it suitable for high-power applications such as power management, motor control, and switching power supplies. The DMN10H220LE-13 is also noted for its fast switching speeds, contributing to improved efficiency in circuits. Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, enabling compatibility with various logic levels. The part is RoHS compliant, ensuring it meets environmental standards. Overall, the DMN10H220LE-13 is a reliable choice for engineers seeking robust performance in demanding electronic designs.

The DMN10H220LE-13 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: The continuous drain current (I_D) is up to 10A, allowing for efficient operation in medium to high current applications.
3. Low On-Resistance: It offers a low R_DS(on) typically around 0.22 ohms, which minimizes power losses during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive requirements.
5. Fast Switching: Designed for rapid switching capabilities, it’s ideal for switching power supplies and motor drivers.
6. Package: Available in a compact TO-220-3 package, aiding in thermal performance and ease of heat dissipation.
Overall, the DMN10H220LE-13 is suitable for applications like DC-DC converters, inverters, and other power management systems.

The DMN10H220LE-13 is packaged in a DPAK (TO-252) package type.

The DMN10H220LE-13 is a N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which current enters the device.
This MOSFET is designed for efficient switching and amplification applications in various electronic circuits. It has a low on-resistance and can handle a voltage up to 30V, making it suitable for low to moderate power applications.

The DMN10H220LE-13 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. Founded in 1967, ON Semiconductor specializes in a wide range of products including analog, discrete, and power management semiconductors, as well as sensors and controllers. The company serves various industries such as automotive, industrial, consumer electronics, and communications. With a strong emphasis on innovation and energy-efficient technologies, ON Semiconductor is recognized for its commitment to sustainability and providing high-performance solutions for modern electronics.

The DMN10H220LE-13 is an N-channel MOSFET typically used in power management applications. Its application areas include switching power supplies, DC-DC converters, motor control, and load switching in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in these areas.

The DMN10H220LE-13 is an N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and SiHB100. Ensure to check specifications such as voltage rating, current rating, and package type for compatibility.