CSD19535KTT

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CSD19535KTT

MOSFET N-CH 100V 200A DDPAK

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Thông số kỹ thuật

Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7930 pF @ 50 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (DDPAK-3)
Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Base Product Number CSD19535

Tổng quan

Description

CSD19535KTT is likely a course code for a specific academic class, potentially related to computer science, software development, or technology. The "CSD" typically stands for Computer Science or Software Development, while the alphanumeric sequence might indicate the level or semester of the course.
In such courses, students typically learn about key concepts in programming, system design, software engineering principles, and possibly emerging technologies related to computer science. The course may involve theoretical lectures, practical labs, projects, and assessments designed to enhance understanding and application of the material.
To get detailed information about the specific course, including its objectives, syllabus, and prerequisites, it is best to consult the official course catalog or academic advisor of the institution offering it.

Features

The CSD19535KTT is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 30V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain currents of up to 50A, ideal for power management and switching applications.
3. Low Rds(on): With a low on-resistance (Rds(on)), often around 8.5mΩ, it ensures efficient operation and reduced power loss.
4. Fast Switching Speed: It supports rapid switching, which is beneficial for high-frequency applications.
5. Thermal Performance: Designed with a robust thermal package, it can dissipate heat effectively, allowing for reliable operation under demanding conditions.
6. Package Type: It comes in a TO-220 package, facilitating easy heat sinking and integration into various circuits.
These features make the CSD19535KTT suitable for applications such as power supplies, motor drives, and other power switching circuits.

Package

The CSD19535KTT is packaged in a 5mm x 6mm QFN (Quad Flat No-lead) package. This type of packaging provides a compact footprint with good thermal performance and is suitable for high-frequency and power applications.

Pinout

The CSD19535KTT is a N-channel MOSFET from Texas Instruments, specifically designed for power management applications. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The output terminal connected to the load.
3. Source (S): The input terminal that connects to the power supply.
The additional pins generally include:
4. Source (S): For power connection.
5. VGS (Gate-Source Voltage): For controlling the gate voltage.
6. Thermal Pad: For heat dissipation.
Note that the exact pinout may vary slightly based on the specific package type, so it’s advisable to refer to the datasheet for detailed specifications and pin assignments. The device is optimized for low RDS(on) for efficient power conversion.

Manufacturer

The CSD19535KTT is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company headquartered in Dallas, Texas. It designs and produces a wide range of analog and embedded processing chips, serving various industries, including automotive, industrial, communications, and consumer electronics. Founded in 1930, TI is known for its innovation in integrated circuits and has a significant presence in the development of technologies like microcontrollers, signal processing, and power management solutions. The CSD19535KTT specifically is a N-channel MOSFET used in power management applications, highlighting TI's focus on efficient and reliable semiconductor solutions.

Application

The CSD19535KTT is a power MOSFET primarily used in applications such as DC-DC converters, power management systems, battery management, and motor drives. Its high efficiency and low on-resistance make it suitable for high-performance power supplies, electric vehicles, and renewable energy systems. Additionally, it can be utilized in industrial automation and consumer electronics for power regulation and control.

Equivalent

The CSD19535KTT is a N-channel MOSFET used in power applications. Equivalent products include the CSD19536KTT, CSD19538KTT, and other similar N-channel MOSFETs with comparable specifications from manufacturers like Infineon, ON Semiconductor, and Vishay. Always check datasheets for voltage, current, and thermal characteristics to ensure compatibility in your specific application.

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