CSD17551Q3A

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CSD17551Q3A

MOSFET N-CH 30V 12A 8SON

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Thông số kỹ thuật

Series NexFET™
Part Status Active
Base Product Number CSD17551
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 15 V
Power Dissipation (Max) 2.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (3x3.3)
Package 8-PowerVDFN
Packaging Cut Tape (CT), Tape & Reel (TR)

Tổng quan

Description

CSD17551Q3A is a part of Texas Instruments' portfolio of integrated circuits, specifically designed for power management in various applications. This component is typically used in power supply designs, providing high efficiency and reliability. It features multiple outputs, enabling it to manage power for different components within a system effectively. The device incorporates advanced features such as thermal protection, overcurrent protection, and adjustable output voltage, making it versatile for applications in consumer electronics, industrial equipment, and telecommunications.
For detailed specifications and applications, it is best to refer to the official datasheet provided by Texas Instruments, which outlines its electrical characteristics, pin configuration, and recommended operating conditions. This information is crucial for engineers and designers looking to implement CSD17551Q3A in their projects for optimal performance and safety.

Features

The CSD17551Q3A is a high-performance, low-side N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum V_DS (drain-source voltage) of 30V, making it suitable for a variety of applications.
2. Continuous Drain Current: Capable of handling up to 60A of continuous drain current, which supports high-power demands.
3. R_DS(on): Offers a low on-resistance of approximately 3.3 mΩ at 10V gate drive, ensuring minimal conduction losses.
4. Gate Threshold Voltage: The V_GS(th) (gate-source threshold voltage) ranges from 1.0V to 2.5V, facilitating easy drive from low-voltage control circuits.
5. Thermal Characteristics: Designed with low thermal resistance, enhancing reliability and performance in high-temperature environments.
6. Package: Available in a compact 5x6 mm QFN package, optimizing space in modern circuit designs.
These features make the CSD17551Q3A ideal for applications such as synchronous rectification, DC-DC converters, and motor drives.

Package

The CSD17551Q3A is packaged in a QFN (Quad Flat No-lead) format, specifically a 3mm x 3mm package. This type of packaging provides a compact design and efficient thermal performance, making it suitable for applications such as power management and conversion.

Pinout

The CSD17551Q3A is a dual N-channel MOSFET with a total of 8 pins. Its primary functions include providing efficient switching and amplification for various applications, such as power management, DC-DC converters, and motor control. The pinout typically includes:
1. Gate 1: Controls the first MOSFET.
2. Drain 1: The output terminal for the first MOSFET.
3. Source 1: Ground reference for the first MOSFET.
4. Gate 2: Controls the second MOSFET.
5. Drain 2: The output terminal for the second MOSFET.
6. Source 2: Ground reference for the second MOSFET.
7. Drain Connection: Common drain pin for both devices.
8. Source Connection: Common source pin for both devices.
This configuration allows for efficient integration in power applications, reducing the overall footprint while enhancing performance.

Manufacturer

The CSD17551Q3A is manufactured by Texas Instruments (TI), a global semiconductor company headquartered in Dallas, Texas. Texas Instruments designs and manufactures a wide range of electronic components, including integrated circuits, microcontrollers, and analog devices. The company is known for its innovation in the field of electronics, particularly in sectors such as automotive, industrial, and personal electronics. TI is also a leader in providing solutions for power management, signal processing, and wireless communications. With a strong focus on research and development, the company aims to create advanced technologies that enhance performance and efficiency in various applications.

Application

CSD17551Q3A is a high-performance, low RDS(on) NexFET™ power MOSFET suitable for applications such as synchronous buck converters, battery management systems, power supply units, and electric vehicle systems. Its efficient switching capabilities make it ideal for power delivery in consumer electronics, telecommunications, and industrial applications, enhancing energy efficiency and thermal performance.

Equivalent

The CSD17551Q3A chip is a N-channel MOSFET. Equivalent products include the Infineon BSC093N08NS3, Vishay SiHB006N08, and ON Semiconductor NTPF100N10. Always verify the specific electrical characteristics and packaging to ensure compatibility for your application.

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