BSZ100N06LS3 G

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BSZ100N06LS3 G

MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Packaging MouseReel
Standard Pack Qty 5000

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Description

BSZ100N06LS3 G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. With a voltage rating of 60V and a continuous current rating of up to 100A, it is suitable for use in DC-DC converters, power supplies, and motor drives. This MOSFET features a low on-resistance (RDS(on)) of approximately 6 mΩ, contributing to minimal power loss and improved thermal performance.
The BSZ100N06LS3 G is housed in a TO-220 package, which facilitates efficient heat dissipation, making it ideal for demanding applications that require robust thermal management. It also includes a gate threshold voltage that allows for easy drive with low gate voltages, enhancing its versatility in various circuit designs. Overall, the BSZ100N06LS3 G is an effective choice for engineers looking to design reliable and efficient power electronic systems.

Features

The BSZ100N06LS3 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 100A, allowing it to support high-power applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 6.5 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for efficient switching at lower voltages.
5. Package Type: It is available in a DPAK package, facilitating easy mounting and thermal management.
6. Applications: Commonly used in DC-DC converters, motor drivers, and power supply circuits.
Overall, the BSZ100N06LS3 is characterized by its high current capability, efficiency, and versatility in power electronic designs.

Package

The BSZ100N06LS3 G is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing effective heat dissipation and allowing for easy mounting on heatsinks.

Pinout

The BSZ100N06LS3 G is a N-channel MOSFET with a pin count of 3. The pin configuration includes:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is the output through which the main current flows when the MOSFET is turned on.
3. Source (S): This pin is the terminal through which current exits the MOSFET.
The BSZ100N06LS3 G is designed for applications requiring efficient switching, such as in power converters and motor drivers, and is typically used in low-voltage applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The BSZ100N06LS3 G is manufactured by Nexperia, a company specializing in semiconductor products. Nexperia focuses on discrete, logic, and MOSFET components, providing a wide range of solutions for various applications, including automotive, industrial, and consumer electronics. Founded in 2017 after being spun off from NXP Semiconductors, Nexperia emphasizes high-volume production and efficiency, catering to global markets with reliable semiconductor devices. Their products are known for quality and performance, making them a significant player in the semiconductor industry.

Application

The BSZ100N06LS3 G is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supplies, motor drivers, and electric vehicles. It is suitable for high-efficiency switching, enabling fast response and low conduction losses in various electronic circuits.

Equivalent

The BSZ100N06LS3 G is an N-channel MOSFET. Equivalent products include the IRF3205, STP100N06, and API 100N06. Always verify specifications like Vds, Id, Rds(on), and package type to ensure compatibility in your application.

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