BSS308PEH6327XTSA1

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BSS308PEH6327XTSA1

MOSFET P-CH 30V 2A SOT23-3

100% gốc & amp; Mới

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Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 80mOhm @ 2A, 10V
Vgs(th)(Max)@Id 2V @ 11µA
GateCharge(Qg)(Max)@Vgs 5 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 500 pF @ 15 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-SOT23

Tổng quan

Description

The BSS308PEH6327XTSA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management, including switching and amplification. It features low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor drivers, and other electronic circuits where efficiency is key.
With a maximum drain-source voltage rating typically around 30V and a continuous drain current rating that can reach up to 50A, the BSS308PEH6327XTSA1 can handle significant electrical loads. Its compact packaging ensures it can be used in space-constrained applications.
This MOSFET is characterized by its thermal stability and reliability, which are essential for maintaining performance in demanding environments. Overall, the BSS308PEH6327XTSA1 is an excellent choice for engineers seeking a robust component for modern electronic designs.

Features

The BSS308PEH6327XTSA1 is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 6.2A, providing robust performance in various circuits.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.045 Ω at V_GS = 10V, which reduces conduction losses and improves efficiency.
4. Fast Switching: The device is optimized for rapid switching, enhancing performance in high-frequency applications.
5. Package Type: It comes in a compact SOT-23 package, suitable for space-constrained designs.
6. Thermal Performance: With good thermal stability, it can handle significant power dissipation, which is crucial for reliable operation.
7. Applications: Commonly used in power management, DC-DC converters, and motor control systems.
These features make the BSS308PEH6327XTSA1 an excellent choice for various electronic applications requiring efficient power switching.

Package

The BSS308PEH6327XTSA1 is packaged in a SOT-23 surface mount package.

Pinout

The BSS308PEH6327XTSA1 is a N-channel MOSFET designed for low-voltage applications. It typically comes in a SOT-23 package, which features a pin count of 3.
The pins are designated as follows:
1. Gate (G) - This pin controls the MOSFET's operation by turning it on or off.
2. Drain (D) - This is the output pin where the current flows out of the device when it is in the on state.
3. Source (S) - This pin connects to the ground or the lower potential side of the circuit.
The BSS308 is commonly used in switching applications, signal amplification, and low-power motor control. The device is notable for its low on-resistance and fast switching speeds, making it suitable for a variety of electronic applications.

Manufacturer

The BSS308PEH6327XTSA1 is manufactured by Nexperia, a semiconductor company that specializes in discrete, logic, and MOSFET devices. Nexperia was formed in 2017 as a spin-off from NXP Semiconductors, focusing on providing high-quality components for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in efficient, reliable semiconductor solutions and operates globally, serving a wide range of markets with a commitment to innovation and sustainability.

Application

The BSS308PEH6327XTSA1 is an N-channel MOSFET primarily used in low-voltage applications such as power management, signal switching, and lighting control. Its compact design and efficient switching capabilities make it suitable for consumer electronics, automotive applications, and power supply circuits. It is also utilized in battery-operated devices due to its low gate threshold voltage and low on-resistance, facilitating efficient operation in portable devices.

Equivalent

The BSS308PEH6327XTSA1 is an N-channel MOSFET. Equivalent products include the BSS308, BSS308P, and BSS138. Additionally, you can consider the si2302 and BS170 for similar applications, depending on voltage and current requirements. Always check specifications like Vds, Id, and package type to ensure compatibility.

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