BSS169H6327

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BSS169H6327

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100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Manufacturer Infineon Technologies
Package SOT-23
Operating Temperature -55℃~+150℃
RDS(on) 12Ω@10V,0.17A
Drain to Source Voltage 100V
Pd - Power Dissipation 360mW
Current - Continuous Drain(Id) 170mA
Reverse Transfer Capacitance (Crss@Vds) 7pF@10V
Number 1 N-channel
Input Capacitance(Ciss) 68pF@10V

Tổng quan

Description

BSS169H6327 refers to a specific course or module, likely within a higher education program, focusing on a particular subject matter. While the exact details may vary by institution, courses designated with such codes typically cover advanced topics in business, social sciences, or related fields.
The course may involve lectures, discussions, case studies, and projects, aimed at providing students with theoretical knowledge and practical skills. It could also include assessments like exams, presentations, or research papers to evaluate students' understanding and application of the material.
For precise information regarding course content, prerequisites, and objectives, it is advisable to refer to the official course syllabus or the institution's course catalog.

Features

The BSS169H6327 is an N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Handling: The device can carry a continuous drain current (I_D) of up to 10A, allowing it to drive moderate loads.
3. Low R_DS(on): It has a low on-resistance, typically around 0.1 ohm, which helps minimize conduction losses and improve efficiency.
4. Fast Switching: The MOSFET supports high-speed switching, making it suitable for applications in power converters and motor drives.
5. Package Type: It usually comes in a TO-220 or similar package, providing good thermal performance and ease of mounting.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing it to be driven by logic-level signals.
These features make the BSS169H6327 ideal for applications such as power switching, load driving, and DC-DC converters.

Package

The BSS169H6327 is packaged in a SOT-23 (Surface-Mount Device) format. This compact package is commonly used for discrete MOSFETs, providing efficient space utilization on printed circuit boards.

Pinout

The BSS169H6327 is a N-channel MOSFET used for various switching applications. It typically comes in a TO-220 package, which has a pin count of three. The function of the pins is as follows:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is connected to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. Current flows into the source from the load when the MOSFET is conducting.
This configuration allows the BSS169H6327 to efficiently switch electronic signals and control power in circuits.

Manufacturer

The BSS169H6327 is manufactured by NXP Semiconductors, a global semiconductor company that specializes in providing high-performance, mixed-signal electronics. NXP focuses on automotive, industrial, and Internet of Things (IoT) applications, delivering innovations that enable smart connected solutions. The company is known for its expertise in secure connectivity and embedded systems, catering to a wide range of industries including automotive, mobile, and consumer electronics. NXP Semiconductors is headquartered in Eindhoven, Netherlands, and has a significant presence in the semiconductor market worldwide.

Application

BSS169H6327 is a N-channel MOSFET commonly used in various application areas, including power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency circuits in consumer electronics, automotive systems, and renewable energy applications.

Equivalent

The BSS169H6327 is a N-channel MOSFET. Equivalent products include the BSS169, BSS170, and 2N7000. Additionally, the IRLML2502 and the SI2302 are often used as substitutes, depending on the specific application requirements such as voltage and current ratings. Always check the datasheets for compatibility.

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