BCP56-10T1G

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BCP56-10T1G

TRANS NPN 80V 1A SOT223

  • Nhà sản xuất
  • Ông. Phần #BCP56-10T1G
  • Gói SOT-223-4
  • Bảng dữ liệu
  • Có sẵn4915

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 1 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 500mV @ 50mA, 500mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 63 @ 150mA, 2V
Power-Max 1.5 W
Frequency-Transition 130MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-261-4, TO-261AA

Tổng quan

Description

BCP56-10T1G is a low-power, high-speed Schottky barrier rectifier diode manufactured by ON Semiconductor. It features a reverse voltage rating of 100V and a forward current rating of 0.5A, making it suitable for various applications such as power management, voltage clamping, and signal rectification in electronic circuits.
The diode's Schottky design provides fast switching capabilities, low forward voltage drop, and minimizes reverse recovery time, enhancing overall efficiency in power conversion applications. The BCP56-10T1G is housed in a small package, which allows for efficient thermal management and space-saving on printed circuit boards.
This diode is commonly used in switching power supplies, DC-DC converters, and RF applications due to its reliability and performance. Its wide operating temperature range further ensures functionality in diverse environmental conditions. Overall, the BCP56-10T1G is a versatile component for engineers looking to optimize their designs for efficiency and performance.

Features

The BCP56-10T1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (Vce) of up to 45V, making it suitable for a variety of applications.
2. Current Rating: The maximum collector current (Ic) is 800mA, allowing for adequate current handling in various circuits.
3. Power Dissipation: It can dissipate up to 625mW, which is beneficial for maintaining low operating temperatures.
4. Gain: The transistor exhibits a high current gain (hFE) ranging from 100 to 600, enhancing its efficiency in amplification tasks.
5. Package Type: The BCP56-10T1G comes in a surface-mount SOT-23 package, allowing for compact designs and easy integration into circuit boards.
6. Application: It is suitable for low-frequency amplification and switching applications in consumer electronics, automotive, and industrial devices.
Overall, the BCP56-10T1G is versatile and reliable for various electronic applications.

Package

The BCP56-10T1G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power transistors, allowing for reliable performance in various applications.

Pinout

The BCP56-10T1G is a bipolar junction transistor (BJT) packaged in a TO-226AA (SOT-23) form factor. It has three pins, which serve the following functions:
1. Base (B) - The middle pin is the base, which controls the transistor's operation by allowing a small current to control a larger current between the collector and emitter.
2. Collector (C) - The pin on one end is the collector, which is where the current flows in from the load.
3. Emitter (E) - The pin on the opposite end is the emitter, which is where the current flows out to ground or another part of the circuit.
The BCP56-10T1G is typically used for switching and amplification applications, with a maximum collector current rating of 1.5 A and a maximum voltage rating of 45 V.

Manufacturer

The BCP56-10T1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including analog, discrete, and power semiconductors. They cater to various industries such as automotive, industrial, communications, and consumer electronics. The company focuses on providing innovative solutions that enhance energy efficiency and performance in electronic devices. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has a significant presence in the semiconductor market and is known for its commitment to quality and sustainability in its manufacturing processes.

Application

The BCP56-10T1G is a NPN transistor primarily used in applications such as switching, amplification, and signal processing. It is suitable for low- to medium-power applications, including driver circuits, power management, and general-purpose switching in consumer electronics, automotive systems, and industrial equipment. Its ability to handle moderate current and voltage makes it ideal for various electronic devices.

Equivalent

The BCP56-10T1G is a NPN transistor commonly used for amplification and switching. Equivalent products include the 2N5551, MPS2222, and BC547. Always check specific data sheets for parameters like Vce, Ic, and hFE to ensure compatibility for your application.

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