BC847BPDW1T1G

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BC847BPDW1T1G

TRAN NPN/PNP 45V 0.1A SC88/SC70

100% gốc & amp; Mới

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Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN, PNP
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 45V
VceSaturation(Max)@IbIc 600mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 200 @ 2mA, 5V
Power-Max 380mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Tổng quan

Description

The BC847BPDW1T1G is a low-power NPN bipolar junction transistor (BJT) designed for various electronic applications, including small signal amplification and switching. It is part of the BC847 series and features a low collector-emitter saturation voltage, making it suitable for low-voltage applications.
This transistor is housed in a SOT-23 package, which is compact and ideal for surface-mount technology (SMT) designs. The BC847BPDW1T1G has a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V, providing versatility for different circuits.
Key specifications include a current gain (hFE) ranging from 100 to 800, which enhances its amplification capability. It operates efficiently in various temperature ranges, making it reliable for consumer electronics, automotive systems, and other applications. The transistor is widely used due to its performance characteristics, ease of integration, and availability.

Features

The BC847BPDW1T1G is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Type: NPN transistor.
2. Voltage Rating: Maximum collector-emitter voltage (Vce) of 45V.
3. Current Rating: Collector current (Ic) up to 100mA.
4. Power Dissipation: Maximum power dissipation of 500mW.
5. Gain: High current gain (hFE) range, typically between 100 and 600.
6. Packages: Available in SOT-23 surface mount package.
7. Temperature Range: Operating junction temperature from -55°C to +150°C.
8. Applications: Suitable for low power amplifiers, switching applications, and signal processing.
This transistor is widely used due to its reliability, compact size, and effective performance in various electronic circuits.

Package

The BC847BPDW1T1G is packaged in a SOT-23 (Surface-Mount Technology) package. This compact package type is designed for surface mounting on PCBs, making it suitable for space-constrained applications.

Pinout

The BC847BPDW1T1G is a NPN transistor packaged in a SOT-23 configuration. It has three pins. The pin functions are as follows:
1. Pin 1 (Emitter): This pin is connected to the emitter of the transistor.
2. Pin 2 (Base): This pin is for the base terminal, where the input signal is applied to control the transistor.
3. Pin 3 (Collector): This pin is connected to the collector, where the output signal is taken.
The BC847BPDW1T1G is commonly used for low-power switching and amplification applications. It has a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V.

Manufacturer

The BC847BPDW1T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including discrete, analog, sensor, and power management components. The company serves various industries such as automotive, industrial, consumer electronics, and communication. Founded in 1999, ON Semiconductor aims to enable energy-efficient electronics and is known for its commitment to sustainability and innovation in semiconductor technologies.

Application

The BC847BPDW1T1G is a low-power NPN transistor commonly used in various applications, including signal amplification, switching circuits, and general-purpose electronic devices. It is suitable for low-voltage operations in consumer electronics, automotive systems, and telecommunications. Its compact package and efficient performance make it ideal for use in portable devices, audio equipment, and low-current relay drivers.

Equivalent

The BC847BPDW1T1G is a NPN bipolar junction transistor (BJT) with low noise characteristics. Equivalent products include the BC547, BC548, and BC556 series (for PNP), as well as the 2N3904 and 2N2222. Ensure to check the specific electrical characteristics and packaging before substituting.

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