BAS16XV2T1G

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BAS16XV2T1G

DIODE GEN PURP 100V 200MA SOD523

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  • Ông. Phần #BAS16XV2T1G
  • Gói SOD-523
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  • Có sẵn7655

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 100 V
Current-AverageRectified(Io) 200mA (DC)
Voltage-Forward(Vf)(Max)@If 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed
ReverseRecoveryTime(trr) 6 ns
Current-ReverseLeakage@Vr 1 µA @ 100 V
Capacitance@VrF 2pF @ 0V, 1MHz
MountingType Surface Mount
Package/Case SC-79, SOD-523
SupplierDevicePackage SOD-523

Tổng quan

Description

The BAS16XV2T1G is a Schottky barrier diode designed for high-speed switching applications. It features a low forward voltage drop and fast recovery time, making it suitable for use in various electronic circuits, including power management, RF applications, and signal clamping.
Key specifications include a maximum reverse voltage of 40V, a forward current rating of 200mA, and a low forward voltage drop typically around 0.3V at 100mA. The diode is housed in a compact SOT-23 package, which is ideal for space-constrained applications.
It is widely used in consumer electronics, automotive, and telecommunications due to its efficiency and reliability. The BAS16XV2T1G is characterized by its ability to handle high-speed signals while minimizing power loss, making it a preferred choice for engineers looking to enhance circuit performance.
Overall, it serves as a versatile component in modern electronic designs, contributing to improved efficiency and performance in various applications.

Features

The BAS16XV2T1G is a small signal Schottky diode designed for high-speed switching applications. Key features include:
- Low Forward Voltage Drop: Typically around 0.45V at 1 A, allowing for efficient operation and reduced power loss.
- Fast Switching Speed: Ideal for high-frequency applications, making it suitable for RF and digital circuits.
- Reverse Voltage Rating: Maximum reverse voltage of 45V, making it suitable for various electronic applications.
- Package Type: Available in a compact SOD-323 package, which is beneficial for space-constrained designs.
- Low Reverse Leakage Current: Ensures minimal power loss during operation.
- Temperature Range: Operable over a wide temperature range, enhancing reliability in diverse environments.
These features make the BAS16XV2T1G suitable for applications such as rectification, signal detection, and clamping circuits in consumer electronics and communication devices.

Package

The BAS16XV2T1G is packaged in a SOT-23 (Surface Mount) package type. This compact packaging is suitable for surface-mount applications, providing efficient space utilization on printed circuit boards.

Pinout

The BAS16XV2T1G is a dual Schottky barrier diode in a SOT-23 package. It has a pin count of 3.
Pin Functions:
1. Anode 1 (A1): The positive terminal for the first Schottky diode.
2. Cathode 1 (K1): The negative terminal for the first Schottky diode; it is also shared with the anode of the second diode.
3. Anode 2 (A2): The positive terminal for the second Schottky diode (shared with K1).
This device is commonly used for switching and rectification applications due to its low forward voltage drop and fast switching speeds. It is suitable for use in various electronic circuits, including power supply systems and signal processing.

Manufacturer

The BAS16XV2T1G is manufactured by ON Semiconductor, a global semiconductor company that provides a wide range of products and solutions. ON Semiconductor specializes in designing and manufacturing various electronic components, including analog, digital, and mixed-signal semiconductors, as well as power management devices. The company serves multiple industries, including automotive, industrial, telecommunications, and consumer electronics. It focuses on innovation and sustainability, aiming to provide efficient and reliable solutions for modern electronic applications.

Application

The BAS16XV2T1G is a low-power Schottky barrier diode primarily used in applications such as RF and microwave circuits, rectification in power supplies, signal detection, and clamping in various electronic devices. Its fast switching speed and low forward voltage drop make it suitable for high-frequency applications and protection circuits in consumer electronics, automotive systems, and telecommunications.

Equivalent

The BAS16XV2T1G is a Schottky barrier diode. Equivalent products include the BAT54, BAT54A, and BAV70 diodes, which also have low forward voltage drop characteristics. Always verify specifications like voltage ratings and current capacities before substitution.

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