APT30DQ120BG

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APT30DQ120BG

DIODE GEN PURP 1.2KV 30A TO247

  • Nhà sản xuất
  • Ông. Phần #APT30DQ120BG
  • Gói TO-247-2
  • Bảng dữ liệu
  • Có sẵn2341

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

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Thông số kỹ thuật

Package Tube
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 1200 V
Current-AverageRectified(Io) 30A
Voltage-Forward(Vf)(Max)@If 3.3 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 320 ns
Current-ReverseLeakage@Vr 100 µA @ 1200 V
MountingType Through Hole
Package/Case TO-247-2
SupplierDevicePackage TO-247 [B]

Tổng quan

Description

The APT30DQ120BG is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power applications, including motor drives, inverters, and power supplies. It features a voltage rating of 1200V and a current rating of 30A, making it suitable for demanding tasks in industrial and consumer electronics.
This IGBT is known for its efficient switching capabilities, low conduction losses, and excellent thermal performance, which enhance overall system reliability and efficiency. It typically comes in a TO-220 package, allowing for easy integration into circuits while facilitating effective heat dissipation.
With a low gate threshold voltage, the APT30DQ120BG ensures compatibility with standard drive circuits, simplifying design processes. Its robustness and reliability make it a popular choice among engineers looking to optimize power conversion systems. When selecting this component, consider its electrical characteristics and thermal management to ensure optimal performance in your specific application.

Features

The APT30DQ120BG is a high-performance N-channel MOSFET designed for various applications, including power conversion and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain currents (I_D) up to 30A, allowing for robust performance in demanding environments.
3. On-Resistance: It offers low on-resistance (R_DS(on)), typically around 0.04Ω, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, enabling easy drive from standard logic levels.
5. Package Type: Housed in a TO-220 package, it provides excellent thermal performance for heat dissipation.
6. Fast Switching Speed: The device features fast switching capabilities, making it suitable for high-frequency applications.
Overall, the APT30DQ120BG is a reliable choice for power management and switching applications requiring efficiency and thermal reliability.

Package

The APT30DQ120BG is typically packaged in a TO-247 format, which is a standard package for power semiconductor devices. This package offers good thermal performance and is suitable for high-power applications.

Pinout

The APT30DQ120BG is a 1200V, 30A N-channel MOSFET typically used in power switch applications. It features a TO-220 package, which has 3 pins.
Pin Function:
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): The source is the terminal through which current enters the MOSFET.
This device is suitable for various applications, including inverters, converters, and motor drives due to its high voltage and current handling capabilities.

Manufacturer

The APT30DQ120BG is manufactured by Advanced Power Technology (APT), which is known for producing power semiconductor devices. APT specializes in high-performance components, particularly in the areas of MOSFETs, IGBTs, and other power electronics solutions. The company focuses on providing advanced technology for various applications, including renewable energy, industrial drives, and consumer electronics. Advanced Power Technology is recognized for its innovation in power management and efficiency, catering to the needs of sectors that require reliable and efficient semiconductor solutions.

Application

The APT30DQ120BG is a 1200V, 30A IGBT (Insulated Gate Bipolar Transistor) suited for applications in power electronics. Key areas include motor drives, induction heating, renewable energy systems (like solar inverters), industrial power supplies, and UPS systems. Its high efficiency and fast switching capabilities make it ideal for applications requiring high voltage and current handling.

Equivalent

The APT30DQ120BG is a 30A, 1200V N-channel IGBT. Equivalent products include:
1. Infineon IGBT: 30N120
2. Mitsubishi: CM30DU-12F
3. ON Semiconductor: FGA30N120
4. STMicroelectronics: STGW30H120
Always verify parameters like voltage, current ratings, and switching characteristics before substitution.

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