2N7002WT1G

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2N7002WT1G

MOSFET N-CH 60V 310MA SC70-3

  • Nhà sản xuất
  • Ông. Phần #2N7002WT1G
  • Gói SC-70-3
  • Bảng dữ liệu
  • Có sẵn3889

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 310mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.6Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.7 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 24.5 pF @ 20 V
PowerDissipation(Max) 280mW (Tj)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SC-70-3 (SOT323)

Tổng quan

Description

The 2N7002WT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-power applications. It features a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 200mA, and a gate-source threshold voltage (V_GS(th)) typically between 2V to 4V. This device is commonly used in switching applications, load driving, and signal amplification due to its low on-resistance (R_DS(on)) and fast switching speeds.
The package type is typically SOT-23, making it suitable for compact designs. It is ideal for interfacing with microcontrollers and can be used in various electronics, including power management systems, LED drivers, and general-purpose switching circuits. The 2N7002WT1G is noted for its reliability and efficiency, making it a popular choice among engineers and hobbyists for applications requiring moderate power handling and compact size.

Features

The 2N7002WT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: It supports a continuous drain current (I_D) of up to 0.2A (200mA) at room temperature.
3. Low Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 0.8V and 3V, enabling operation with lower gate drive voltages.
4. Fast Switching Speed: The device offers fast switching capabilities, making it suitable for high-speed applications.
5. Package Type: Available in SOT-23 surface-mount package for compact design and ease of integration.
6. Low On-Resistance: Features a low on-resistance (R_DS(on)) providing efficient operation and minimizing power loss.
7. Applications: Commonly used in load switching, power management, and signal switching circuits.
These attributes make the 2N7002WT1G a versatile choice for various electronic applications.

Package

The 2N7002WT1G is packaged in a SOT-23 surface mount package.

Pinout

The 2N7002WT1G is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This is where the main current flows out of the device. It is connected to the load.
3. Source (S): This pin is connected to ground or the negative side of the circuit. Current flows into this pin when the MOSFET is turned on.
The 2N7002WT1G is commonly used in low-power applications, including switching and amplifying signals. It features low on-resistance and fast switching speeds, making it suitable for various electronic circuits.

Manufacturer

The 2N7002WT1G is manufactured by ON Semiconductor, a global semiconductor company. Founded in 1967, ON Semiconductor specializes in the design and production of a wide range of semiconductor components, including analog, digital, and mixed-signal devices. The company focuses on various applications such as automotive, industrial, and consumer electronics. ON Semiconductor is known for its commitment to innovation and sustainability within the semiconductor industry.

Application

The 2N7002WT1G is an N-channel MOSFET commonly used in low-power switching applications, such as in power management circuits, signal amplification, and relay driving. It's suitable for use in consumer electronics, automotive applications, and digital circuits due to its fast switching speed and low on-resistance. Additionally, it can be utilized in PWM (Pulse Width Modulation) applications for motor control and LED dimming.

Equivalent

The 2N7002WT1G is an N-channel MOSFET. Equivalent products include BS170, 2N7000, 2N7001, and SI2302. For surface-mount alternatives, consider BSS138 or BSS170. Always verify the specifications like voltage, current ratings, and package types to ensure compatibility for your specific application.

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