2N7002LT1G

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2N7002LT1G

MOSFET N-CH 60V 115MA SOT23-3

  • Nhà sản xuất
  • Ông. Phần #2N7002LT1G
  • Gói SOT23-3
  • Bảng dữ liệu
  • Có sẵn4695

100% gốc & amp; Mới

24 giờ sẵn sàng để vận chuyển

Bảo hành 365 ngày

RFQ & amp; Nhận thêm Giảm giá

Thông số kỹ thuật

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 115mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 7.5Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 25 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Tổng quan

Description

The 2N7002LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 200mA, making it suitable for switching and amplification tasks in various electronic circuits.
This MOSFET has a low gate threshold voltage (V_GS(th)), typically around 2-3V, allowing it to be driven easily by low-voltage logic levels. It boasts low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation. The compact SOT-23 package offers space-saving benefits, making it ideal for portable and space-constrained applications.
Applications include switching power supplies, low-side switching, signal amplification, and various consumer electronics. The 2N7002LT1G is widely used due to its reliability, performance, and ease of use in DIY and professional projects alike.

Features

The 2N7002LT1G is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of switching applications.
2. Current Handling: The device can handle a maximum continuous drain current (I_D) of 200mA.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 0.8V to 3V, allowing for operation with low gate drive voltages.
4. Fast Switching: The 2N7002LT1G is designed for quick switching times, enhancing efficiency in applications like low-power switching and signal amplification.
5. Low On-Resistance: It features low on-resistance (R_DS(on)), typically around 1.8Ω, which minimizes conduction losses.
6. Package: It is available in a small SOT-23 package, making it suitable for compact designs.
7. RoHS Compliant: The component is compliant with RoHS standards, ensuring it is free from hazardous substances.
These attributes make the 2N7002LT1G ideal for a wide range of electronic applications, including power management and signal switching.

Package

The 2N7002LT1G is packaged in a SOT-23 surface mount package. This compact package is designed for efficient thermal performance and space-saving in electronic circuits.

Pinout

The 2N7002LT1G is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this terminal allows current to flow between the drain and source.

2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET. It is typically connected to ground or a lower voltage in an N-channel configuration.
The 2N7002LT1G is commonly used in low-power applications for switching and amplification due to its small size and efficient performance.

Manufacturer

The 2N7002LT1G is manufactured by ON Semiconductor. ON Semiconductor is an electronics company that specializes in semiconductor solutions. They provide a wide range of products including discrete semiconductors, analog ICs, sensors, and power management devices. Their focus is on enabling energy-efficient solutions and supporting a variety of markets, including automotive, industrial, and consumer electronics. The company, headquartered in Phoenix, Arizona, is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The 2N7002LT1G is a N-channel MOSFET used in various applications including low-side switching, signal switching, and small motor control. It is suitable for use in power management and load switching in portable devices, consumer electronics, and battery-powered applications. Its low on-resistance and fast switching capabilities make it ideal for enhancing efficiency in circuits.

Equivalent

The 2N7002LT1G is an N-channel MOSFET. Equivalent products include:
1. BS170
2. 2N7000
3. 2N7002
4. BSS138
5. MMBF170
Ensure to check the specifications (Vgs, Id, Rds(on), etc.) for compatibility in your application.

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